residents apos perceptions of and attitudes toward sustainable tourism planning and management in amasra turkey
ORGANIC POLLUTANTS TEN YEARS AFTER THE STOCKHOLM CONVENTION – ENVIRONMENTAL AND ANALYTICAL doc
... Thickeners Binder in pigment printing Anti-freeze additives in dye formulation Solubilising agents in printing pastes In discharge printing of vat dyes as oxidising agent Direct printing with reactive ... found during finishing processes are: Textile Finishing Industry as an Important Source of Organic Pollutants - 37 cross-linking agents in easy-care finishing, flame-retardant agents, softening agents, ... available, and the cost involved Both continuous and discontinuous dyeing involve preparation of the dye, dyeing, fixation, washing, and drying Quite a large amount of the non-fixed dye leaves the dyeing...
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Báo cáo khoa học: Analysis and biological relevance of advanced glycation end-products of DNA in eukaryotic cells ppt
... number of cells was analyzed (Fig 2B) In order to investigate whether CEdG has the potential to accumulate in genomic DNA of nongrowing cells, HSC-T6 cells were kept in minimal medium containing ... we investigated whether CEdG accumulates in resting HSC-T6 cells After 14 days of incubation, a 1.7-fold increase of CEdG content in the genomic DNA of the cells was measured These results indicated ... may in uence both replication and transcription by steric hindrance and ⁄ or mispairing Less efficient replication may be caused by modification of the origin of replication or by inhibition of...
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Advanced Microwave and Millimeter Wave Technologies Devices, Circuits and Systems Part 4 ppt
... involving sources of external energy to initiate and sustain the break up of the highenergy bonds in GaN A few of the dry etching techniques used for GaN include, ion milling and reactive ion etching ... of drift velocity of charge carriers moving under the influence of a high electric field The working principles of the device were first described by Read in 1958 However, the idea of obtaining ... doping profile, E(x) profiles of hi-lo, lo-hi-lo SDR and DDR diodes Fig (a) (i) Schematic diagram of Single Drift ‚high-low‘ structure, doping profile and field profile (ii) Schematic diagram of...
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Advanced Microwave and Millimeter Wave Technologies Devices, Circuits and Systems Part 5 ppt
... The band pass ripple and the out -of- band attenuation of each band-pass filter is chosen for maximal attenuation between sub-bands with the purpose of reducing the intersymbol interference in reception ... in the frequency band between 890 – 915 MHz in Uplink and 935 – 960 MHz in downlink (ETSI, 1999b) The emission filter then has a bandwidth of 25 MHz and a central frequency of 902.5 MHz Out of ... of the transmitter It includes a low noise power amplifier (LNA), a splitter, a band-pass filter bank and then in each band, a squarer and an integrator Integration time in reception ( Ti ) and...
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Advanced Microwave and Millimeter Wave Technologies Devices, Circuits and Systems Part 6 pdf
... parameters defining the reflector surface In addition, the direction of the reflected ray and the point of intersection of the reflected ray with the aperture plane are obtained by use of geometrical ... find the fields in other regions In addition, number of main points of the major lobe found by FFT is constrained Therefore, it is interpolated from above points to obtain E- and H-planes Half-Power ... examine the field scattering problem on interface S1 at first The incident fields may come from both sides of the interface, and being scattered to both sides of it, as is shown in Fig 4(a) The interface...
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Advanced Microwave and Millimeter Wave Technologies Devices, Circuits and Systems Part 7 potx
... illustrated in Fig.19 The curve of Gcin represents the input negative conductance looking into the collector node of the crosscoupled pair, and the bold line serves as the curve of Gbin looking into ... frequency increased with the increase of the number of unit elements, since the guided wavelength increases with the increase of frequency in lefthanded region Right-handed resonance Left-handed ... a combination of left-handed and right-handed transmission line At low frequency, CL and LL are dominant, the transmission line shows left-handed characteristics; at high frequency, LR and CR...
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Advanced Microwave and Millimeter Wave Technologies Devices, Circuits and Systems Part 10 potx
... the inversion of (18), the DC component of drain current is determined, resulting in IDC=105 mA At this point, using (21) and (23) or, alternatively, equation (24), the values of output matching ... current and bias voltage At this point, waveforms in Fig 2b have been completely determined in the time domain, without recurring to the frequency domain However, the remaining elements of the ... also 5.5 The inverse Class F amplifier The term “inverse” in this kind of amplifier suggests somewhat inverted in the behavior: in fact, current and voltage drain waveforms are interchanged if...
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Advanced Microwave and Millimeter Wave Technologies Devices, Circuits and Systems Part 11 ppt
... J Ju and S Kahng, “Design of the Miniaturaized UHF Bandpass Filter with the Wide Stopband using the Inductive-Coupling Inverters and Metamaterials,” in Proc Korea Electromagnetic Engineering Society ... lefthandedness and (CRi, LRi) for the right-handedness property From the standpoint of the purely left-handed unit, LRi and CRi can be considered parasitic inductance and capacitance against CLi and ... value of s is restricted by s < 3, while the value of c is restricted by c < 30 As a reminder, the variable s in (28) and Tables and is defined by (23) and variables c and b in Tables and are defined...
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Advanced Microwave and Millimeter Wave Technologies Devices, Circuits and Systems Part 13 pdf
... where Svi and Suc are the areas of the vth and uth sample ring of the input and output planes, respectively; Evi is the incident field at the vth sample ring of the input plane, and Euc and Eud ... obtained by using Stratton-Chu formulas instead of Fresnel-Kirchhoff diffraction integral formula are presented; and a new conclusion is drawn 5.1 Reviews of comparisons of Durnin and Sprangle In ... (Durnin, 1987) However, its phase pattern is brightdark interphase concentric fringes, as shown in Fig 1(c) An ideal Bessel beam extends infinitely in the radial direction and contains infinite...
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Advanced Microwave and Millimeter Wave Technologies Devices, Circuits and Systems Part 14 pptx
... the phase of the input signal x The main problem of this technique is that somehow we are distorting the signal generating nonlinear distortion both in- band and out -of- band The in- band distortion ... the problem of estimating the sea surface wind navigational direction w consists in defining the main maximum of a curve of the reflected signal intensity (azimuth of the main maximum of the NRCS ... axis in the inclined plane Most equipments use a mounting angle of a beam axis in the inclined plane of somewhere between 65° and 80° (Kayton & Fried, 1997) The choice of a mounting angle of a...
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Advanced Microwave and Millimeter Wave Technologies Devices, Circuits and Systems Part 15 potx
... (2.2.1) and (2.2.2), the quantity Wν is derived in terms of the incoming intensity energy variation to unit path dI s, W ds (2.2.3) By considering an absorbing, emitting and scattering medium, ... have to take into account that the variation of upwelling radiation is certainly due to the combination of absorption and scattering by a mixture of liquid and ice hydrometeors and disperse liquid ... Malaric Faculty of Electrical Engineering and Computing, Zagreb Croatia Introduction The increasing use of technology in our everyday environment has led to the ubiquitous presence of electromagnetic...
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Advanced Microwave and Millimeter Wave Technologies Devices, Circuits and Systems Part 16 docx
... remain closed at time t Integration of [2] taking t = at the beginning of R process plus H process, yields n t n exp t τ K Similarly taking t = at the beginning of D process we obtain ... electromagnetic field interactions The EMF, in the frequency range we are applying, i.e ELF of 0.1-217 Hz, and 100 and 800 Hz modulating MW carrier and, MW of 9.6 and 13.6 GHz, of low power (SAR induced on ... Synchronization of at least pairs of neurons activity defined as a coincidence in spikes frequency and firing rhythm in time (Azanza et al., 2002, 2009) One of the most striking behaviour was oscillatory and...
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Advanced Microwave and Millimeter Wave Technologies Devices, Circuits and Systems Part 17 ppt
... one-year period The CD of average 1-minute rain intensities was obtained Experimental Results The obtained monthly and annual statistics of both rain intensities and rain attenuation and the assessed ... The obtained CDs of the average 1-minute rain intensities R(1) for the individual months and the whole year period are given in Fig The obtained average 1-minute rain intensity for 0.01% of the ... performances of experimental links are presented in this section Rain Attenuation on Terrestrial Wireless Links in the mm Frequency Bands 635 6.1 Monthly and annual statistics of rain intensities...
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Advanced Microwave and Millimeter Wave technologies devices circuits and systems Part 1 doc
... Linköping, Sweden 3) Department of Electrical Engineering, Linköping University, SE-581 83, Linköping, Sweden 4) Department of Electronic Engineering, ECE Faculty, NED University of Engineering ... Franco Giannini and Rocco Giofrè 19 Developing the 150%-FBW Ku-Band Linear Equalizer 389 Sungtek Kahng 20 Ultrawideband Bandpass Filter using Composite Right- and Left-Handedness Line Metamaterial ... acknowledge efforts of the Government of Oman for the financial support of this work and creating and financing the Sultan Qabos IT Chair at NED University of Engineering and Technology, Karachi, Pakistan...
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Advanced Microwave and Millimeter Wave technologies devices circuits and systems Part 2 pot
... Degree of MASTER OF SCIENCE IN ELECTRICAL ENGINEERING 10 Minin I., Minin O (2002) The possibility of impulse plasma antenna creation, Proceeding of the 6th Russian-Korean Int Symp On Science and ... book of abstracts, pp 160 See also: Minin O.V and Minin I.V (2000) The influence of the grain size of microstructure of the surface layer material of a hypersonic body on the properties of air ... I.V., Minin O.V (1999) Some new principles of cumulative jet formation Collection of works NVI (in Russian), Vol 7, pp 19-26 Patent SU № 1508938 (1987) Minin V.F., Minin I.V., Minin O.V and et...
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Advanced Microwave and Millimeter Wave technologies devices circuits and systems Part 4 doc
... involving sources of external energy to initiate and sustain the break up of the highenergy bonds in GaN A few of the dry etching techniques used for GaN include, ion milling and reactive ion etching ... of drift velocity of charge carriers moving under the influence of a high electric field The working principles of the device were first described by Read in 1958 However, the idea of obtaining ... doping profile, E(x) profiles of hi-lo, lo-hi-lo SDR and DDR diodes Fig (a) (i) Schematic diagram of Single Drift ‚high-low‘ structure, doping profile and field profile (ii) Schematic diagram of...
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Advanced Microwave and Millimeter Wave technologies devices circuits and systems Part 5 potx
... The band pass ripple and the out -of- band attenuation of each band-pass filter is chosen for maximal attenuation between sub-bands with the purpose of reducing the intersymbol interference in reception ... in the frequency band between 890 – 915 MHz in Uplink and 935 – 960 MHz in downlink (ETSI, 1999b) The emission filter then has a bandwidth of 25 MHz and a central frequency of 902.5 MHz Out of ... of the transmitter It includes a low noise power amplifier (LNA), a splitter, a band-pass filter bank and then in each band, a squarer and an integrator Integration time in reception ( Ti ) and...
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Advanced Microwave and Millimeter Wave technologies devices circuits and systems Part 6 docx
... parameters defining the reflector surface In addition, the direction of the reflected ray and the point of intersection of the reflected ray with the aperture plane are obtained by use of geometrical ... find the fields in other regions In addition, number of main points of the major lobe found by FFT is constrained Therefore, it is interpolated from above points to obtain E- and H-planes Half-Power ... examine the field scattering problem on interface S1 at first The incident fields may come from both sides of the interface, and being scattered to both sides of it, as is shown in Fig 4(a) The interface...
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Advanced Microwave and Millimeter Wave technologies devices circuits and systems Part 8 ppt
... Physics of Charging in Dielectrics and Reliability of Capacitive RF-MEMS Switches 275 14 x Physics of Charging in Dielectrics and Reliability of Capacitive RF-MEMS Switches George Papaioannou1 and ... Moreover, the presence of such structures cannot be rejected in SiNx Taking all these into account we can conclude that the charging mechanisms taking place in insulating films used in MEMS capacitive ... recording of charge injected in a stressed switch The results were excellent and the preliminary evaluation of the charge decay allowed the determination of the diffusion coefficient of charges in...
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Advanced Microwave and Millimeter Wave technologies devices circuits and systems Part 9 potx
... fractional bandwidth of the passband is characterized by the dB band-edge frequency of lower and upper bands, a steeper slope and a narrower bandwidth in the passband may be obtained with an increasing ... a 100 Ω input impedance (the 100 Ω circle is drawn in the Smith Chart of the figure 19) The corresponding impedance matching ratio of 5:1 is in the range of interest of a wide range of applications, ... Ω impedance of the HPA output-port and combines the power of the 2nd-stage transistors The drain DC-bias is included in this network and it is done through a parallel inductance of a value calculated...
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