fate effects and analysis of organic pollutants
ORGANIC POLLUTANTS TEN YEARS AFTER THE STOCKHOLM CONVENTION – ENVIRONMENTAL AND ANALYTICAL doc
... Carmen and Suteu Daniela Environmental Fate, Effects and Analysis of Organic Pollutants 87 Bioavailability of Polycyclic Aromatic Hydrocarbons Studied Through Single-Species Ecotoxicity Tests and ... scientists and engineers and will contribute to better assessments of the fate of Organic Pollutants in a multimedia environment Dr Tomasz Puzyn and M.Sc Eng Aleksandra Mostrag-Szlichtyng Laboratory of ... Chemical Degradation of Chlorinated Organic Pollutants for In Situ Remediation and Evaluation of Natural Attenuation 345 Junko Hara Chapter 15 Electrochemical Incineration of Organic Pollutants for...
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Báo cáo khoa học: Analysis and biological relevance of advanced glycation end-products of DNA in eukaryotic cells ppt
... appearance of a peak pair with retention times of 8.3 and 9.5 min, and (b) the presence and (c) the correct proportion of the three major mass transitions of CEdGA,B that were used for MS ⁄ MS detection ... thorough removal of RNA from the samples and the use of negative ionization for Fig Restriction digests of CEdG-modified and unmodified pGL3 Control vector For the introduction of CEdG adducts, ... decreasing the amount of transcripts Analysis of the amount of luciferase mRNA of transfected cells by semiquantitative RT-PCR resulted in an approximately 60% reduction of transcripts Therefore,...
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Advanced Microwave and Millimeter Wave Technologies Devices, Circuits and Systems Part 4 ppt
... field and droping profiles of n++ pp++ and p++ n+ SDR diodes Fig The schematic diode structure, doping profile and field profile of a Double Drift flat profile diode 118 Advanced Microwave and ... structure, doping profile and field profile Fig (b): The schematic diode structure, doping profile and typical field profile of (i) HighLow DDR and (ii) Low-High-Low DDR IMPATT diodes Wide Band Gap Semiconductor ... The doping profile at the junction and at the interface of substrate and epitaxy are approximated by use of appropriate exponential and error function The schematic doping profile of a typical...
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Advanced Microwave and Millimeter Wave Technologies Devices, Circuits and Systems Part 5 ppt
... between 100 and 200 MHz Therefore, RF filters have wide pass-bands and the ratio between the bandwidth of the pass-band and the central frequency of the filter is typically of the order of a few ... in-band and out-ofband performance For example, for the GSM 900 standard, these bands are defined by the following frequency ranges for the mobile station: In-band: 915 MHz -980 MHz and Out-ofband: ... frequency band is one of the bands allocated to mobile WiMAX The emission filter, in this case, should have a bandwidth of 200 MHz and a central frequency of 3700 MHz Out of band rejection RF and microwave...
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Advanced Microwave and Millimeter Wave Technologies Devices, Circuits and Systems Part 6 pdf
... operating frequency of the antenna is 1.4 GHz Reflector aperture is 7.0m in height and 13.5m in width with a focal axis of 5.31m The profile of azimuth curve is parabola and the profile of elevation ... current of charge pump and control its amount The D inputs of the DFFs are fixed to logic high, and the two input signals (fref and fdiv) of PFD trigger each DFF The pulsewidth of both UP and Down ... M and N are the number of points which have been distributed uniformly in x- and y-direction of S plane The aperture diameter of the parabolic reflector is d The relations x of (3) and...
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Advanced Microwave and Millimeter Wave Technologies Devices, Circuits and Systems Part 7 potx
... inductance and shunt capacitance cannot be avoided in nature It consists of series resonators LR and CL and shunt resonators CR and LL, where the subscript “L” and “R” denote left-handed and righthanded, ... Devices, Circuits and Systems 268 practice, the bandwidth of the matching network cannot be made wide enough to cover the whole left-handed and right-handed pass-band, and the performance of the D-CRLH ... dielectric constant of 2.65 and thickness of mm The thickness of copper foils of both sides is 0.017 mm The dimension of the diplexer is about 65 mm by 25 mm All spacings and finger widths of interdigital...
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Advanced Microwave and Millimeter Wave Technologies Devices, Circuits and Systems Part 10 potx
... three passbands are set as 2, and GHz The bandwidths of the first, second and third passband are chosen as 200, 300 and 200 MHz, respectively, which are 10%, 15% and 10% of the first passband’s central ... quadruple-passband filter The central frequencies of four passbands are set as 2, 5, and 11.3 GHz The bandwidth of four passbands is all chosen as 180 MHz, which is 9% of the first passband’s central ... degree and bandwidth of a filter, the performance of a filter with resonators can be well indicated by translating the measurement into an unloaded Q of a resonator Design of Multi-Passband Bandpass...
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Advanced Microwave and Millimeter Wave Technologies Devices, Circuits and Systems Part 11 ppt
... “Expanding the bandwidth of the linear gain equalizer: Ku-band communication,” KEES Journal, Vol KEESJ18, No 2, pp 105-110,Feb 2007 [6] H Ishida, and K Araki, “Design and Analysis of UWB Bandpass ... “Expanding the bandwidth of the linear gain equalizer: Ku-band communication,” KEES Journal, Vol KEESJ18, No 2, pp 105-110,Feb 2007 [6] H Ishida, and K Araki, “Design and Analysis of UWB Bandpass ... capacitance of 0.477pF and its effective inductance of 5.53nH Via the iterative steps using Eq’s (2) and (3), the initial values are found W=0.20 mm, l =1.30mm, S=0.12 and nIDF =14 (a) Ultrawideband Bandpass...
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Advanced Microwave and Millimeter Wave Technologies Devices, Circuits and Systems Part 13 pdf
... where Svi and Suc are the areas of the vth and uth sample ring of the input and output planes, respectively; Evi is the incident field at the vth sample ring of the input plane, and Euc and Eud ... plane and the BOE, and z2 is the distance between the BOE and the output plane; the aperture radius of the BOE, which is represented by R , is the same as that of the input and output planes; n1 and ... number of components in the outside of the LNA x LNA (t ) A1 cos( w1t 1 ) A2 cos( w2t 2 ) (4) where A1 and A2 are the amplitude components of interference and desire signal, and w1 and...
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Advanced Microwave and Millimeter Wave Technologies Devices, Circuits and Systems Part 14 pptx
... Prof Dr hab Adam Krężel (University of Gdańsk), Prof Dr J Pereira Osório (University of Porto), Prof Dr ir Peter Hoogeboom and Prof Dr ir Leo P Ligthart (Delft University of Technology), Prof ... sizes of cells of the first annulus 1 and the second annulus 2, as shown in Fig 4, the frequency limits of the fore-Doppler filter FD1.f and FD 2.f , and of the aft-Doppler filter FD1.a and ... mounting angles of beam axis in the inclined plane of 58.3° (lower limit of high accuracy of measurement at fD / FD 0.1 ) and 72.9° (lower limit of sufficient high accuracy of measurement at...
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Advanced Microwave and Millimeter Wave Technologies Devices, Circuits and Systems Part 15 potx
... specific area of the body exposed and the efficiency of heat elimination; intensity of field strength; duration of exposure; specific frequency or wavelength; and thickness of skin and subcutaneous ... Fig.3 and show the result of numerical modeling analysis of E-strength and fig.4 and results of temperature distribution in cell due to E field Warmer colors on figures are higher values of E ... GTEM-cell and Wire Patch Cell in calculating thermal and non-thermal biological effects of electromagnetic fields Marija Salovarda Lozo and Kresimir Malaric Faculty of Electrical Engineering and Computing,...
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Advanced Microwave and Millimeter Wave Technologies Devices, Circuits and Systems Part 16 docx
... applying, i.e ELF of 0.1-217 Hz, and 100 and 800 Hz modulating MW carrier and, MW of 9.6 and 13.6 GHz, of low power (SAR induced on biological samples of 4.00 x 10-1 mW/Kg and 2.02x10-3 W/Kg ... U.V and ranges of the EM spectrum) or appreciable thermal effects (see dosimetry data) In fact in the range of ELF, the heating effects are eventually due to the production of eddy currents and ... 2 , of time average B eff Eq.[8] has been widely and firmly tested in single neurons of Helix aspersa for static (del Moral and Azanza 1992) and ELF weak MF (Azanza and del Moral 1998) and...
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Advanced Microwave and Millimeter Wave Technologies Devices, Circuits and Systems Part 17 ppt
... most of Europe, for example, A0.01 exceeds the value of dB/km In Figures and 5, world maps of estimated rain attenuation exceeded 0.01% of time on a km long path with a frequency of 58 GHz and ... collector area of 500 cm2, and the amount of rain per tip was 0.1 mm The time of the tips was recorded with an uncertainty of second The rain gauge is situated near the receivers of the radio systems ... 34 dB and dB by the pertinent part of the CD for August 2007 and for attenuation smaller than dB by the pertinent part of the CD for September 2007 The obtained monthly and yearly CDs of attenuation...
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Advanced Microwave and Millimeter Wave technologies devices circuits and systems Part 1 doc
... the theory of functioning of cumulative charges there was a quite certain sight on a nature of a without the jet collapse of facing of a cumulative liner and formation of a dispersion of cumulative ... spectrum of application is making the microwave and millimeter wave system development one of the most advanced technologies of radio science, especially in view of the ever increasing demand of communication ... Sante Laviola and Vincenzo Levizzani 28 Use of GTEM-cell and Wire Patch Cell in calculating thermal and non-thermal biological effects of electromagnetic fields 573 Marija Salovarda Lozo and Kresimir...
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Advanced Microwave and Millimeter Wave technologies devices circuits and systems Part 2 pot
... density profiles and (b) NDD+ profiles in the off state The left is for VDoff = 20 V and the right is for VDoff = 80 V NDD = 2x1017 cm-3, NDA = 1017 cm-3 and EC – EDD = 1.0 eV Effects of Field ... EDD = 1.0 eV Analysis of Parasitic Effects in AlGaN/GaN HEMTs 63 Fig.6 shows a comparison of (a) conduction-band-edge energy profiles, (b) electron density profiles, and (c) NDD+ profiles between ... higher VDoff Fig.10 shows (a) electron density profiles and (b) NDD+ profiles in the off state for the two cases The left is for VDoff = 20 V (VG = Vth = – 7.50 V) and the right is for VDoff = 80...
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Advanced Microwave and Millimeter Wave technologies devices circuits and systems Part 4 doc
... field and droping profiles of n++ pp++ and p++ n+ SDR diodes Fig The schematic diode structure, doping profile and field profile of a Double Drift flat profile diode 118 Advanced Microwave and ... structure, doping profile and field profile Fig (b): The schematic diode structure, doping profile and typical field profile of (i) HighLow DDR and (ii) Low-High-Low DDR IMPATT diodes Wide Band Gap Semiconductor ... The doping profile at the junction and at the interface of substrate and epitaxy are approximated by use of appropriate exponential and error function The schematic doping profile of a typical...
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Advanced Microwave and Millimeter Wave technologies devices circuits and systems Part 5 potx
... between 100 and 200 MHz Therefore, RF filters have wide pass-bands and the ratio between the bandwidth of the pass-band and the central frequency of the filter is typically of the order of a few ... in-band and out-ofband performance For example, for the GSM 900 standard, these bands are defined by the following frequency ranges for the mobile station: In-band: 915 MHz -980 MHz and Out-ofband: ... frequency band is one of the bands allocated to mobile WiMAX The emission filter, in this case, should have a bandwidth of 200 MHz and a central frequency of 3700 MHz Out of band rejection RF and microwave...
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Advanced Microwave and Millimeter Wave technologies devices circuits and systems Part 6 docx
... operating frequency of the antenna is 1.4 GHz Reflector aperture is 7.0m in height and 13.5m in width with a focal axis of 5.31m The profile of azimuth curve is parabola and the profile of elevation ... current of charge pump and control its amount The D inputs of the DFFs are fixed to logic high, and the two input signals (fref and fdiv) of PFD trigger each DFF The pulsewidth of both UP and Down ... M and N are the number of points which have been distributed uniformly in x- and y-direction of S plane The aperture diameter of the parabolic reflector is d The relations x of (3) and...
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Advanced Microwave and Millimeter Wave technologies devices circuits and systems Part 8 ppt
... Physics of Charging in Dielectrics and Reliability of Capacitive RF-MEMS Switches 275 14 x Physics of Charging in Dielectrics and Reliability of Capacitive RF-MEMS Switches George Papaioannou1 and ... characteristic of a CRLH TL, the bandwidth of 10 is much narrower than the amplitude bandwidth There is a phase difference of about 90 caused by the coupler The microstrip TLs at port 3, port and port ... overview and better understanding of the impact of various parameters such as the dielectric material properties, the operating temperature, etc on the physics of charging in dielectrics and reliability...
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Advanced Microwave and Millimeter Wave technologies devices circuits and systems Part 9 potx
... (15) As the fractional bandwidth of the passband is characterized by the dB band-edge frequency of lower and upper bands, a steeper slope and a narrower bandwidth in the passband may be obtained ... architecture of the three-ordered dual-passband filter The central frequencies of two passbands are set at and 5.3 GHz The bandwidths of the first and second passband are chosen as 300 and 200 MHz, ... multi-passband bandpass filter, only formulas for dual-passband filter synthesis are provided in detail On the other hand, design examples of the triple- and quadruplepassband filters are offered...
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