sample fabrication and characterization

Electronic, magnetic and optical properties of oxide surfaces, heterostructures and interfaces role of defects

... Chapter Sample fabrication and characterization 20 2.1 Pulsed laser deposition 20 2.1.1 History 20 2.1.2 Mechanism 22 iv 2.1.3 RHEED 27 2.2 Sample characterization ... my research and I am grateful to all of them Especially, I would like to sincerely thank my supervisors Prof Ariando and Prof T Venkatesan for educating and encouraging me Prof Ariando keeps me ... science It is well his creativity and enthusiasm that enlighten me to boldly and creatively i think in my own research I will ever be indebted to Prof Ariando and Prof T Venkatesan I would like...

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Design, fabrication, and characterization of a solenoidsystem to generate magnetic ﬁeld for an ECR proton source

Danh mục: Hóa học - Dầu khí

... field, and (b) flat magnetic field are shown in figure The calculation was also performed analytically (Montgomery 1966) using standard relations for calculating magnetic field Design, fabrication, and ... conductor, water pressure drop and flow, the inlet and outlet connections were provided Total five inlet and five outlet connections were provided The water flow rate liter/min and pressure 3·5 kg/cm2 was ... restricted to less than 20◦ C The inductance and resistance of the solenoid coils were measured using precision LCR meter (Model:PM6306, Design, fabrication, and characterization of a solenoid system...

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fabrication and characterization of anodic titanium oxide nanotube arrays of controlled

Danh mục: Vật lý

... duration of anodization and F- Figure SEM images of ATO NT after treatments with TiCl4: (a) and (c) top and side views with annealing temperature 350 °C; (b) and (d) top and side views with annealing ... two standard errors b Additional component in electrolytes A-D contains guanidinium thiocyanate (GuNCS, 0.1 M) in a mixture of acetonitrile and valeronitrile (volume ratio 15/1 for A and B, and ... Gratzel ¨ and co-workers,21 was designed for both front- and backilluminated NP-DSSC devices The large concentration of I2 and lack of Li+ in electrolyte C lead to the decrease in both JSC and VOC...

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Báo cáo hóa học: " Fabrication and characterization of carbon-based counter electrodes prepared by electrophoretic deposition for dye-sensitized solar cells" doc

Danh mục: Hóa học - Dầu khí

... contributions HK fabricated the cells and wrote the paper HK and HC did the characterization and imaging of the solar cells SH and YK helped design the experimental study and advised on the project MJ ... the surlyn polymer foil and a cover glass The deposited SWNTs, graphenes, and carbon composites were characterized by field-emission scanning electron microscopy [FE-SEM] and ultraviolet-visible ... followed by carbon nanocomposites and SWNTs Conclusion In this report, we demonstrated the fabrication of carbon nanomaterials deposited on FTO substrates by the EPD method and their application as counter...

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báo cáo hóa học:" Fabrication and characterization of carbon-based counter electrodes prepared by electrophoretic deposition for dye-sensitized solar cells" pot

Danh mục: Hóa học - Dầu khí

... contributions HK fabricated the cells and wrote the paper HK and HC did the characterization and imaging of the solar cells SH and YK helped design the experimental study and advised on the project MJ ... the surlyn polymer foil and a cover glass The deposited SWNTs, graphenes, and carbon composites were characterized by field-emission scanning electron microscopy [FE-SEM] and ultraviolet-visible ... followed by carbon nanocomposites and SWNTs Conclusion In this report, we demonstrated the fabrication of carbon nanomaterials deposited on FTO substrates by the EPD method and their application as counter...

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báo cáo hóa học:" Fabrication and characterization of well-aligned and ultra-sharp silicon nanotip array" ppt

Danh mục: Hóa học - Dầu khí

... Fabrication and characterization of well-aligned and ultra-sharp silicon nanotip array Chi-Chang Wu*1,2, Keng-Liang Ou1,2, and Ching-Li Tseng1 Graduate Institute of Biomedical Materials and ... completely and a nanotip with pyramid-like shape is developed The field emission property was measured, and the turn-on field and work function of the ultra-sharp nanotip was about 5.37 V/µm and 4.59 ... 1,000 V and measured the emission current Results and discussion The progress of transformation of the tips and photoresist at different etching time is displayed in Table From the eagle-view and...

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Design, fabrication and characterization of thin film materials for heterojunction silicon wafer solar cells

Danh mục: Kỹ thuật - Công nghệ

... Al-coated substrate and (ii) standard μc-Si:H(n) and ZnO:Al thickness on an Al-coated substrate For the DBR stack, the μc-Si:H(n) and ZnO:Al layer thickness is chosen as 69 nm, and 142 nm respectively ... intrinsic aSi:H, µc-Si:H(n) and ZnO:Al are 3, 69 and 142 nm, respectively, for the conductive DBR For the standard case, the thicknesses for a-Si:H(n) and ZnO:Al are 20 and 80 nm, respectively ... reported bandgap of amorphous silicon (~1.7 eV) against that of crystalline silicon (1.1 eV), it follows that there is a larger band offset (~0.45 eV) at the valence band edges and a smaller band offset...

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Large area plasmonic nanostructures design, fabrication and characterization by laser

Danh mục: Cao đẳng - Đại học

... Experimental details 86 4.2.1 Fabrication and characterization of bimetallic Ag/Au nanodots formed by thermal annealing 86 4.2.2 Fabrication and characterization of quasi-ordered bimetallic ... focused on the design and fabrication of plasmonic nanostructures over a large area using scalable, rapid and inexpensive nanofabrication tools, such as laser nanofabrication and thermal annealing, ... nm, and (e) λ = 1298 nm) and the dipole resonance ((b) λ = 1233 nm, (d) λ = 1599 nm, and (f) λ = 1887 nm) The lattice constants for nanorod array are 800 nm for (a) and (b), 1100 nm for (c) and...

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2D and 3d terahertz metamaterials design, fabrication and characterization

Danh mục: Cao đẳng - Đại học

... the narrow working band arising from the resonance properties In order to cover a broadband working frequency band, this study covers the metamaterials design, fabrication, and characterization ... Lim, L.P Shi, and T.C Chong Applied Physics A, 101, 33-36 (2010) Fabrication and Characterization of Broadband Terahertz Wire-grid Polarizer Z.C Chen, M.H Hong, C.S Lim, L.P Shi, and T.C Chong ... control and manipulate terahertz waves 1.4 Organization of thesis This thesis is directed towards to the design, fabrication, and characterization of terahertz metamaterials in 2D and 3D forms and...

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Fabrication and characterization of advanced ALGaNGaN high electron mobility transistors

Danh mục: Cao đẳng - Đại học

... Ga-ON and Ga-N bond energies are located at 20 and 19.6 eV, respectively (a) Ga-ON peak is observed for the sample without VA and SiH4 treatment, and (b) is absent for the sample with VA and SiH4 ... scale) and gate voltage VG for the control sample at characterization temperatures of (a) 300 K and (b) 460 K Gp(10-11)/ω contours as a function of frequency (log scale) and gate voltage VG for samples ... MOS-HEMTs with and without in situ VA and SiH4 treatment The number of the measured devices with and without in situ VA and SiH4 treatment are 29 and 23, respectively With in situ VA xiii and SiH4...

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Fabrication and characterization of germanium photodetectors

Danh mục: Cao đẳng - Đại học

... detector dark current and photocurrent sources, and the transistor channel noise [1.17] 1.5 Objectives and Scope The main aim of this thesis was to demonstrate fabrication and characterization of ... high stand-by power consumption thus making Ge MSM photodetectors unfavorable and not practical Due to the narrow bandgap and strong Fermi-level pinning of the metal/Ge interface at valence band, ...  FW HM  d for Si/SiGe and SiGe  buffer are 3084 cm2/Vs and 377 cm2/Vs respectively Inset shows the impulse response under V reverse bias for Si/SiGe and SiGe buffer samples 51 Fig 4.1:...

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Fabrication and characterization of composite membranes for gas separation

Danh mục: Tổng hợp

... husband, Feng Zhao, for his unwavering and unconditional love and support My parents and parents’ in-law also deserve the special recognition for their love and continuous encouragement and support ... adjustment of syngas ratios and recovery of hydrogen from nitrogen (ammonia production) and hydrocarbons (refinery processes) (Ho and Sirkir, 1992; Kesting and Fritzsche, 1993; Paul and Yampol’skii, 1994) ... Spillman and Sherwin, 1990; Paul and Yampol’skii, 1994; Mulder, 1996): ease of installation and operation, size and weight efficiency, potentially low energy consumption, environmentally benign and...

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Fabrication and characterization of luminescent silicon nanocrystal films

Danh mục: Tổng hợp

... memories include dynamic-random-access memory (DRAM) and flash memory DRAM allows fast write and erase However, its data retention is limited by junction and transistor leakages and thus frequent refresh ... in physics and chemistry Research work has been focused on the unique structures, stability, optical and electronic properties, and chemical reactivity of Si NCs, both in free space and on surfaces ... guidance and encouragement all through the course of my PhD study His perseverance and diligence are outstanding examples to me I am deeply indebted to my co-supervisors, Professors Wu Yihong and...

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Fabrication and characterization of memory devices based on organic polymer materials

Danh mục: Tổng hợp

... Units and Europium Complex 62 3.1 Introduction 62 3.2 Experiment 63 3.2.1 Preparation and Characterization of the PKEu Copolymer 63 3.2.2 Device Fabrication and Characterization 64 3.3 Results and ... mainstream memory technologies include dynamic random-access memory (DRAM), static random-access memory (SRAM), and flash memory (NAND and NOR) DRAM is a random access memory that stores each bit of ... of “0” and “1”, and memorize the state Memories can be based on mechanical, magnetic, optical, biological and electronic technologies Electrical memory is used extensively in computers and portable...

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Fabrication and characterization of nanostructured half metals and diluted magnetic semiconductors

Danh mục: Tổng hợp

... (a) Sample Mn1.5%, (b) sample Mn12%, (c) sample Mn24.8%, and (d) sample Mn28.1% FIG 4.11 Dynamic conductance-voltage curves at different temperatures 126 for the samples under study (a) Sample ... (a) Sample Mn1.5%, (b) sample Mn24.8%, (c) sample Mn28.1% FIG 4.12 Temperature-dependent G ' curves for different samples (a) Sample Mn1.5%, (b) sample Mn24.1%, and (c) sample Mn28.1% xviii 126 ... ZFC and FC curves for group A samples at the temperature 155 range from to 200 K at a magnetic field of 20 Oe Inset: ZFC and FC curves for samples A1 and A2; (b) ZFC and FC curves for group C samples...

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Fabrication and characterization of the ultrafiltration and nanofiltration membranes

Danh mục: Tổng hợp

... Wang, my parents and my family for their endless love, encouragement and support that enable me to continue my academic pursuing i Fabrication and Characterization of Ultrafiltration and Nanofiltration ... geometric standard deviation (σp) and the molecular weight cut off (MWCO) of PBI membrane fabricated from same polymer .152 x Fabrication and Characterization of Ultrafiltration and Nanofiltration ... 5.2.1 Chemicals 134 5.2.2 Fabrication of PBI Nanofiltration Hollow Fiber Membranes 135 v Fabrication and Characterization of Ultrafiltration and Nanofiltration Membranes WANG KAI...

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Fabrication and characterization of AIGaN gan HEMTs

Danh mục: Tổng hợp

... layer and the channel layer: ρ(z) = e[n(z) – p(z) + NA – ND] (2.7) where n(z) and p(z) are the densities of the electrons and holes, and NA and ND are the densities of the ionized donors and acceptors, ... charges bend the band edges and create a triangular potential well in the conduction-band edge of the lower bandgap material, for example, GaN Electrons accumulate in this well and form a sheet ... applications, it is crucial to first develop and optimize a good fabrication process that is reproducible and cost effective Development and optimization of fabrication processes such as the formation...

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Fabrication and characterization of lateral spin valves

Danh mục: Tổng hợp

... Hacia, M Wahle, S F Fischer and U Kunze, J Appl Phys 96, 6706 (2004) 21 Chapter Three: Fabrication and characterization of lateral spin valves CHAPTER THREE FABRICATION AND CHARACTERIZATION TECHNIQUES ... structure after 1st and 2nd level EBL and deposition 32 Chapter Three: Fabrication and characterization of lateral spin valves Figure 3.9 SEM image of structures after 2nd EBL and 2nd evaporation ... structure, a total of EBL steps and deposition steps were required Figure 3.5 shows the various procedures involved in EBL fabrication 27 Chapter Three: Fabrication and characterization of lateral...

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Fabrication and characterization of photonic crystals

Danh mục: Tổng hợp

... Acknowledgements First and foremost, I thank my supervisor, A/Prof Liu Xiang Yang and co-supervisor, A/Prof Ji Wei, and Dr Zhang Keqin for their invaluable guidance and advice throughout my entire candidature ... energy bands separated by energy gaps 1.1.3 Optical Characterization Optical measurements are the main technique for the characterization of photonic band gap materials While optical reflectance and ... they are nanofabrication, self-assembly methods, colloidal crystal templating and directed self-assembly methods 1.1.4.1 Nanofabrication Nanofabrication techniques use lithography and etching,...

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Fabrication and characterization of planar hall devices

Danh mục: Tổng hợp

... experimental techniques involved in the fabrication of MR and PHE devices The steps and flow chart for the device fabrication is discussed in this chapter This fabrication includes wafer cleaning, ... Dau, and Armando Encinas, Sensors and Actuators, 81, (2000) Chapter Theory Chapter Theory In order to develop ultra sensitive sensor for data storage applications, it is important to understand ... Fundamental and Applications”, Hard covered, 1995 [2] W Thomson., Proc R Soc London 8, 546 (1857) [3] B Dieny, M Li, S.H Liao, C Horng, and K Ju, J Appl Phys., 88, pp 4140-4143 [4] Shan X Wang and Alexander...

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