aging of proteins in ambient condition and under high electric fields etc

nanophotonics with surface plasmons, 2007, p.341

nanophotonics with surface plasmons, 2007, p.341

Ngày tải lên : 04/06/2014, 14:57
... School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, IN, USA Alexander V Kildishev School of Electrical and Computer Engineering and ... School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, IN, USA Igor I Smolyaninov Department of Electrical and Computer Engineering, University ... 33 Đ Introduction Integrated optical devices and circuits are being increasingly used for light routing and switching in the rapidly developing area of broadband optical communications...
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Fabrication and characterization of semiconductor nanowires for thermoelectric application 3

Fabrication and characterization of semiconductor nanowires for thermoelectric application 3

Ngày tải lên : 13/10/2015, 15:57
... pressure of 0.01 mbar to minimize the presence of unintended contaminating gases such as H2O and O2 A counter-flow of Argon (Ar) gas, at a flow rate of 150 sccm, was then introduced during the ... analysis and identifying fine features On the other hand, XPS has the capability of determining surface chemical structure and bonding through the use of chemical shifts Although Auger lines also exhibit ... examination The scanning electron microscope (SEM) is a type of microscope that uses a beam of high energy electrons to image a sample by scanning it in a raster scan manner The interaction of...
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Design, fabrication, and characterization of a solenoidsystem to generate magnetic field for an ECR proton source

Design, fabrication, and characterization of a solenoidsystem to generate magnetic field for an ECR proton source

Ngày tải lên : 22/12/2013, 08:58
... G, Gammino S, Gobin R, Ferdinand R 2000 Trips: The high intensity proton source for the Trasco project Rev Sci Instrum 71(2): 771–773 Celona L, Ciavola G, Gammino S, Chines F, Presti M, Ando L, ... The insulation to the conductor layer was provided using ‘H’ class fibreglass insulation tape The diameter of the bore was 150 mm so that plasma chamber including water-cooling jacket and high ... than μS/cm) having inlet temperature of 27◦ C Based on the length of the conductor, water pressure drop and flow, the inlet and outlet connections were provided Total five inlet and five outlet...
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fabrication and characterization of anodic titanium oxide nanotube arrays of controlled

fabrication and characterization of anodic titanium oxide nanotube arrays of controlled

Ngày tải lên : 19/03/2014, 16:48
... VOC and FF decreasing upon increasing tube length Because the extent of the increase in JSC was much greater than the extent of the decrease in VOC and FF, the overall efficiency of conversion of ... ultrasonic vibration of the ATO films in deionized water containing a small proportion of Al2O3 particles of average size 300 nm Parts a and b of Figure show top and side views of SEM images of ATO films ... the variation of length of TiO2 NT as a function of period of anodization (the corresponding SEM images of each datum showing the lengths of the tubes are given in the Supporting Information,...
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Báo cáo hóa học: " Fabrication and characterization of carbon-based counter electrodes prepared by electrophoretic deposition for dye-sensitized solar cells" doc

Báo cáo hóa học: " Fabrication and characterization of carbon-based counter electrodes prepared by electrophoretic deposition for dye-sensitized solar cells" doc

Ngày tải lên : 20/06/2014, 23:20
... Fernandina Beach, FL, USA) Electrochemical impedance spectroscopy measurements were carried out with a bias illumination of 100 mW/cm2 under an open-circuit condition and in a frequency range of ... counter electrode in DSSCs among them Based on this finding, in the future, we intend to conduct further studies for improving the performance of graphene-based counter electrodes in order to realize ... characterization and imaging of the solar cells SH and YK helped design the experimental study and advised on the project MJ developed the conceptual framework and supervised the work All authors read and...
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báo cáo hóa học:" Fabrication and characterization of carbon-based counter electrodes prepared by electrophoretic deposition for dye-sensitized solar cells" pot

báo cáo hóa học:" Fabrication and characterization of carbon-based counter electrodes prepared by electrophoretic deposition for dye-sensitized solar cells" pot

Ngày tải lên : 21/06/2014, 17:20
... Fernandina Beach, FL, USA) Electrochemical impedance spectroscopy measurements were carried out with a bias illumination of 100 mW/cm2 under an open-circuit condition and in a frequency range of ... counter electrode in DSSCs among them Based on this finding, in the future, we intend to conduct further studies for improving the performance of graphene-based counter electrodes in order to realize ... characterization and imaging of the solar cells SH and YK helped design the experimental study and advised on the project MJ developed the conceptual framework and supervised the work All authors read and...
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báo cáo hóa học:" Fabrication and characterization of well-aligned and ultra-sharp silicon nanotip array" ppt

báo cáo hóa học:" Fabrication and characterization of well-aligned and ultra-sharp silicon nanotip array" ppt

Ngày tải lên : 21/06/2014, 17:20
... of the ultra-sharp nanotip array (a) Photoresist coated and patterned on the silicon substrate (b) after 3-min etching, (c) after 4-min etching, and (d) after 6-min etching (e) After 10-min etching, ... shielding mask to protect the underlying silicon (Figure 2a) The etching depth of silicon is increased upon etching time, while the PR is also gradually etched away; the exposed silicon is then increased ... increased and etched away Therefore, the sidewall of the silicon pillar is pared and transformed into tip (Figure 2b,c,d) Finally, the PR is fully etched away after 10-min etching, and a pyramid-like...
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Design, fabrication and characterization of thin film materials for heterojunction silicon wafer solar cells

Design, fabrication and characterization of thin film materials for heterojunction silicon wafer solar cells

Ngày tải lên : 09/09/2015, 11:15
... crystalline counterpart, the conduction / valence band offsets of the doped and intrinsic silicon thin films with respect to the crystalline silicon substrate is of interest The valence band discontinuity ... although an independent optimisation of the point-contact size is required for both front and rear emitter devices in order to balance the gain in VOC and JSC with the drop in FF with shrinking rear ... 2011 to 8.7 billion in 2035, which is a fundamental driver of energy demands, and the continued dominance of fossil fuel usage will lead to dwindling reserves leading to increased costs, further...
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Large area plasmonic nanostructures design, fabrication and characterization by laser

Large area plasmonic nanostructures design, fabrication and characterization by laser

Ngày tải lên : 09/09/2015, 11:17
... (d) Scattering of an individual octamer with Von and Voff detected for polarization direction of 0 and 90°[32] Figure 1.4 (a) Far-field extinction spectra of Ag nanoparticle chains and single particles ... wavelength as a function of the grating constant along x and y directions SEM image of a grating with 220 and 540 nm in x and y directions is inserted in the top-left side of the figure [34] (c) ... wavelength as a function of the grating constant along x and y directions SEM image of a grating with 220 and 540 nm in x and y directions is inserted in the top-left side of the figure [34] (c)...
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2D and 3d terahertz metamaterials  design, fabrication and characterization

2D and 3d terahertz metamaterials design, fabrication and characterization

Ngày tải lên : 10/09/2015, 08:40
... mainly determined by the gap size of the SRR and the dielectric properties of the surrounding environment [44] With the polarization of the electric field parallel to the gap-bearing side of ... SRRs of the same antenna gap size, (c) Hybrid design at core sizes of 24, 28, 32 and 34 µm and a constant gap of µm and (d) Hybrid design at gap sizes of 2, 4, and µm and a constant core size of ... Boon Chong, Lin Ying, Zhou Yi, Chin Seong, Doris, Zhenying, Lanying, Ziyue, Mohsen, Xu Le, Thanh, Liu Yan, Li Xiong, and Ningren Thank you for your help in both my study and life, and I deeply...
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Fabrication and characterization of advanced ALGaNGaN high electron mobility transistors

Fabrication and characterization of advanced ALGaNGaN high electron mobility transistors

Ngày tải lên : 10/09/2015, 09:11
... Fabrication and Characterization of Advanced AlGaN/GaN High- Electron-Mobility Transistors by LIU Xinke Doctor of Philosophy − Electrical and Computer Engineering National University of Singapore ... current IG, and drain current ID as a function of drain voltage VD for the high voltage off-state measurement in a Fluorinert ambient of the AlGaN/GaN MOSHEMT (LG = m, LGS = m, and LGD = 20 ... advantages of GaN in high temperature and high power electronic devices, the material properties of GaN and its competing materials are presented in Table 1.1 [5] As shown in Table 1.1 Comparison of...
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Fabrication and characterization of germanium photodetectors

Fabrication and characterization of germanium photodetectors

Ngày tải lên : 10/09/2015, 15:47
... The PIN diode with “I” stands for intrinsic, includes an intrinsic region in between P and N regions Due to the built -in potential or external reverse bias, the intrinsic region is depleted and ... criterion for highquality Ge includes: low intrinsic doping level, low threading dislocation, and highly-ordered crystal structure (2) integrate tensile-strained Ge PIN photodetector into CMOS platform ... cleaved single mode fiber is shown together To obtain the intrinsic characteristics of the Ge JFET, the contribution of source-drain current of the un-illuminated part of the channel in ID calculation...
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Fabrication and characterization of composite membranes for gas separation

Fabrication and characterization of composite membranes for gas separation

Ngày tải lên : 12/09/2015, 11:24
... compact and lightweight Examples include OBIGGS (On Board Inert Gas Generating System) in aerospace, purging and blanketing in chemical processing, chemical tanker inerting in marine; in addition, ... ethane/ethylene and propan/propylene is one of the important tasks in petroleum refining and petrochemical industries Unsaturated hydrocarbons like ethylene and propylene are demanded in large amounts in ... profiles induced by the air gap Note: the dashed lines indicate the moving surface of the hollow fiber…………………… 131 Fig 6.3 SEM-EDX silicon line scanning spectra for the cross-section of the single-layer...
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Fabrication and characterization of luminescent silicon nanocrystal films

Fabrication and characterization of luminescent silicon nanocrystal films

Ngày tải lên : 12/09/2015, 11:25
... uncertainty principle, cause sufficient spreading of the wavefunction in s momentum space for direct band-to-band recombination to occur The opening of the bandgap when the NC size shrinks is nowadays ... appearing in the bandgap are stabilized by the bandgap widening induced by quantum confinement [18] The blueshift of the PL is easily explained as the shifts in band-edge states which accompany the increase ... After 12 etching and several cycles of washing in diluted HF and deionized (DI) water, the PS layer shows visible yellow/orange light under the light of a hand-held UV lamp Ultrasonic bath in DI...
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Fabrication and characterization of memory devices based on organic polymer materials

Fabrication and characterization of memory devices based on organic polymer materials

Ngày tải lên : 12/09/2015, 11:29
... role in establishing the sudden increase in injection current and in the retention of high- conductivity state after the bias was removed [81] Similar switching and memory behavior to that of the ... floating gate, and is also called nano-floating gate memory (NFGM) Instead of injecting charges in the floating gate, charges are trapped in the silicon nanocrystals that act as nano-floating ... the drain and form the ON current (Ion) 1.1 MOSFET and Moore’s Law Chapter 1: Introduction Since the invention of the first integrated circuit (IC) in 1958, the semiconductor industry has undergone...
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Fabrication and characterization of nanostructured half  metals and diluted magnetic semiconductors

Fabrication and characterization of nanostructured half metals and diluted magnetic semiconductors

Ngày tải lên : 12/09/2015, 11:29
... limiter of CMOS scaling and new types of devices based on different operating principles will be required Among many of the possible candidates, the idea of using spin in electronics, i.e., spintronics, ... [3,4] Spintronics involves the study of active control and manipulation of spin degree of freedom in materials and devices [5] As in this case, the information is carried by both the spin and charge ... based on InMnAs and GaMnAs, including electrical-field controlled 10 Chapter Introduction and literature survey magnetization, [53] spin injection using GaAsMn, [54] current-induced domain-wall...
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Fabrication and characterization of the ultrafiltration and nanofiltration membranes

Fabrication and characterization of the ultrafiltration and nanofiltration membranes

Ngày tải lên : 12/09/2015, 11:29
... removal of highly colored lignin and chlorinated lignin derivatives arising from bleaching of wood pulp [Bindoff, 1987], demineralization in the dairy industry [Horst et al., 1995], removal of small ... conical spinneret on ultra-filtration hollow fiber spinning Since in the channel of conical spinneret, the radial flowing will influence the chain packing of macromolecules further and subsequently ... shear stress induced in the outer surface of hollow fibers at the outlet of spinneret during spinning (90º spinneret) .66 Table 3.1 Diffusivities and Stokes radii of neutral solutes in aqueous...
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Fabrication and characterization of AIGaN gan HEMTs

Fabrication and characterization of AIGaN gan HEMTs

Ngày tải lên : 05/10/2015, 22:32
... concentrations, higher mobilities, better charge confinement, higher peak saturation drain currents, higher breakdown voltages, higher cutoff frequencies, etc This is in view of exploiting the advantages of ... spontaneous and piezoelectric polarization induced sheet charge and the growth of low defects AlGaN barrier layers with high aluminium mole fractions With this combination of high frequency operation, high ... on doping and material variations in the various layers These changes in the energy band provide an additional means, independent of doping and applied external fields, to control the flow and...
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Fabrication and characterization of lateral spin valves

Fabrication and characterization of lateral spin valves

Ngày tải lên : 05/10/2015, 22:32
... manipulate the dynamics of spin in solid state devices, and this begins with a clear understanding of spin injection, spin accumulation and spin detection Since the discovery of the anisotropic magnetoresistance ... Review aluminum and gold, as well as on increasing the spin injection efficiency of their spin valves A summary of the spin relaxation lengths and spin injection polarizations obtained for different ... FABRICATION AND CHARACTERIZATION OF LATERAL SPIN VALVES TAN WANJING (B Eng (Hons.), NUS) A THESIS SUBMITTED FOR THE DEGREE OF MASTER OF ENGINEERING NANOENGINEERING PROGRAMME NATIONAL UNIVERSITY OF SINGAPORE...
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Fabrication and characterization of photonic crystals

Fabrication and characterization of photonic crystals

Ngày tải lên : 05/10/2015, 22:32
... spheres of high refractive index in air, does not possess a band gap If the refractive index contrast (the ratio of the refractive index of the spheres and their background) is increased the band ... interesting and useful effects Shining a light through a large block of glass with a single bubble of air in it, some of it will reflect and some of it will continue forward at a slightly different ... function of v the wavevector k , these frequency “bands” form the band structure of the crystal Figure 1.2 shows band structure of an ‘inverse’ face-centered cubic lattice of spheres consisting of...
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