I Physics, Chemistry and Application of Nanostructures Editors V E Borisenko S V Gaponenko V S Gurin World Scientific Physics, Chemistry and Application of Nanostructures Reviews and Short Notes to NANOMEETiNG-2001 Physics, Chemistry and Application of Nanostructures Reviews a n d Short Notes to NANOMEETING-2001 Minsk, Belarus 22— 25 May 2001 Editors V E Borisenko Belarusian State University of Informatics and Radioelectronics S V Gaponenko Institute of Molecular and Atomic Physics V S Gurin Belarusian State University V f e World Scientific wb London 'Hong Kong Singapore »New Jersey Jersey'London* Published by World Scientific Publishing Co Pte Ltd P O Box 128, Farrer Road, Singapore 912805 USA office: Suite IB, 1060 Main Street, River Edge, NJ 07661 UK office: 57 Shelton Street, Covent Garden, London WC2H 9HE British Library Cataloguing-in-Publication Data A catalogue record for this book is available from the British Library PHYSICS, CHEMISTRY AND APPLICATION OF NANOSTRUCTURES Reviews and Short Notes to NANOMEETING-2001 Copyright © 2001 by World Scientific Publishing Co Pte Ltd All rights reserved This book, or parts thereof, may not be reproduced in any form or by any means, electronic or mechanical, including photocopying, recording or any information storage and retrieval system now known or to be invented, without written permission from the Publisher For photocopying of material in this volume, please pay a copying fee through the Copyright Clearance Center, Inc., 222 Rosewood Drive, Danvers, MA 01923, USA In this case permission to photocopy is not required from the publisher ISBN 981-02-4618-8 Printed in Singapore INTERNATIONAL CONFERENCE NfiNOMEeWQ-2001 Minsk, Belarus, May 22-25, 2001 ORGANIZERS Belarusian State University of Informatics and Radioelectronics (Minsk, Belarus) and Le Centre de Recherches sur les Mecanismes de la Croissance Cristalline (Marseille, France) SPONSORS European Commission INTAS MOTOROLA Travelink Invest Ministry of Education of Belarus Academy of Sciences of Belarus Basic Research Foundation of Belarus V INTERNATIONAL ORGANIZING COMMITTEE V E Borisenko - Co-chairman F Arnaud d'Avitaya- Co-chairman L J Balk E V Buzaneva J Derrien S V Gaponenko N Koguchi B W Licznerski L W Molenkamp S Ossicini K A Valiev (Belarus) (France) (Germany) (Ukraine) (France) (Belarus) (Japan) (Poland) (Germany) (Italy) (Russia) BELARUSIAN NATIONAL ORGANIZING COMMITTEE V I Strazhev - Chairman M P Batura A I Belous V E Borisenko V S Gurin F F Komarov A A Leshok N M Olekhnovich VI FOREWORD Dear Reader, You open the book, which contains invited reviews and short notes of contributions to NflNOME£lWG-2D01 This Conference is the first international forum of scientists, studying physics and chemistry of nanostructures, of the XXI-st century It is for main objective helping the development of nanotechnology and promoting nanostructures for applications in modern information and communication technologies Impressing results of the last century are summarized in the review papers while new challenges of the XXI-st century are arising from the other original contributions It is evident that even 100 years after the birth of Quantum Mechanics , we are still learning more and more about interaction between light and electrons in matter The Constitution of what, we call "nanoworld", is formed by quantum effects The papers in the book are arranged in traditional sections: Physics of Nanostructures, Chemistry of Nanostructures, Nanotechnology, and Nanostructure Based Devices Both basic and applied researches are presented Among different results characterizing our knowledge about the nanoworld, including attempts to use it for information processing, one can note an increased interest to quantum dot systems Depending on the size, composition and spatial distribution of quantum dots they can behave like artificial atoms, either independent or interacting in a specific lattice Such systems exhibit indeed astonishing properties promising the birth of new generations of electronic, optoelectronic and optical devices The papers published in this book must be considered as preprinted notes, which will be enlightened at the Conference, in May 2001, where a detailed discussion of our understanding of the nanoworld is expected We deeply acknowledge Sponsors who provided financial support for the Conference Victor E Borisenko Francois Arnaud d'Avitaya Co-chairmen of MNOM&MG-IOOI Minsk and Marseille January 2001 *14 December 1900, M Planck presented to the German Physical Society his seminal paper putting forward radically new idea that the radiated energy can only be emitted in quanta That day is considered to be the birth of quantum physics VII CONTENTS Foreword vii PHYSICS OF NANOSTRUCTURES Discovery and understanding of nanoworld in the XX-th century: main achievements in the mirror of the Nobel Prizes V E Borisenko Self-assembled InGaAs quantum dot superlattices (invited) M Kawabe 15 Multiexciton dynamics of GaAs single quantum dots (invited) 22 K Edamatsu, C Watatani, T Itoh, S Shimomura, S Hiyamizu Photoreflectance Investigations of low dimensional semiconductor structures (invited) 30 J Misiewicz, G Sek, M Bayer, A Forchel Thermoelectric properties of chaotic quantum dots (invited) 40 H Buhmann, S Maksimov, L W Molenkamp Polarons in quantum wells (invited) 48 A I Bibik, M O Dzero, B Gerlach, M A Smondyrev Self-assembling SiGe dots: nucleation and growth (invited) 57 / Berbezier, A Portavoce, F Volpi, A Ronda Stress and strain distributions in Ge dots on Si(001) by molecular dynamics simulation (invited) P Raiteri, F Valentinotti, L Miglio Light emission from semiconducting silicide nanostructures in silicon (invited) K J Kirkby, M Lourengo, T M Butler, K Homewood, C N Mckinty IX 69 76 475 The P-FeSi2 layer shown in Fig 1(b) exhibits an orientation relationship (OR) with the substrate (determined from a selected area diffraction pattern not shown), which is close to the type-I OR [7] This type-I OR is characterised with a small lattice mismatch with the Si substrate The top Si layer was transformed into polycrystalline Si after annealing at 900 °C (the as-deposited Si was amorphous) The pores in the polycrystalline Si layer could be attributed to the Kirkendall effect [8] due to the intermixing of die amorphous Si with the as-deposited Fe:Si layer All the solar cell devices fabricated on samples annealed at 800 °C for 20 and 900 °C 18 h exhibited rectifying I-V characteristics (not shown) A photovoltage was also generated by each sample when illuminated Preliminary results from measuring the spectral response of the devices indicate that die photo voltage is generated at both the P-FeSi2 and Si band edges, though further work is necessary to ascertain the individual components Discussion The results reported here confirm that P-FeSi2 offers a novel route for achieving the photovoltage generation There are still many fabrication issues mat need to be overcome, which include quality of Si/p-FeSi2 interface and stability of the layers However, it is apparent mat if diese issues'can be overcome the realisation of the high efficiencies for P-FeSi2 solar cells [4] is feasible References HuntT D., ReesonK J., Homewood K P., TeonS W., Gwilliam R M., Sealy B J., Nucl Instrum Meth Phys Res B 84 (1994) 168 Yang Z., Homewood K P., Finney M S., Harry M A., Reeson K J., J Appl Phys 78 (3) (1995) Lange H., Phys Stat Sol (b) 201 (1997) Powalla M., Herz K., App Sur Sci 65/66 (1993) 482 Maeda Y., Miyake K., Ohashi K In Proceeding of Japan-UK Joint workshop on Kankyo-Semiconductors (Japan, 2000) McKinty C N., Kewell A K., Sharpe J S., Lourenco M A., Butler T M., ValizadehR., Colligon J S., ReesonK J., KirkbyK J., HomewoodK P., Nucl Instrum Meth Phys Res B 161-163 (2000) 922 Shao G., Homewood K P., Intermetallics (2000) 1405 Cottrell A., An introduction to Metallurgy PHYSICS, CHEMISTRY AND APPLICATION OF NANOSTRUCTURES, 2001 RESONANT TUNNELING THROUGH A N ARRAY OF QUANTUM DOTS COUPLED TO SUPERCONDUCTORS UNDER THE EFFECT OF MAGNETIC FIELD A N MINA Faculty of Science, Cairo University, Beni-Suef Branch Beni-Suef, Egypt E-mail: adelphil@aucegypt.edu Quantum transport characteristics of an array of semiconductor quantum dots coupled to superconducting leads are studied under the effect of magnetic field The conductance of this mesoscopic device was deduced by solving the Bogoliubov-de Gennes (BdG) equation The energy dependence of the normalized conductance show a resonance behavior for different transparency of the superconductor (S) - semiconductor (Sm) interface The magnetic field dependence of the conductance shows quantization in units of e2/h with resonance Intoduction Quantum transport in mesoscopic structures of metals, semiconductors, and superconductors has been of considerable interest for more than a decade [1,2] Quantum dots [3] can be weakly coupled via tunnel barriers to external leads in order to study their transport properties For sufficiently low temperatures the conductance of the dot exhibits equally 'paced peaks with increasing gate voltage [4-6] where each successive peak corresponds to a tunneling of a single electron into the dot This occurs when the increase in the Fermi energy in the leads matches the energy required to charge the dot by one additional electron The suppression of tunneling between the peaks by Coulomb repulsion is known as Coulomb blockade [7] Recently, the conductance of a NbN-2DEG-NbN junction [8] was measured experimentally under the effect of a magnetic field Their results show a quantization of the conductance of the junction In the present paper, a model for an array of quantum dots coupled to a superconducting leads is proposed The quantum transport characteristics of this mesoscopic device are studied under the effect of a magnetic field Theoretical treatment Mesoscopic device, in this paper, can be modelized as array of semiconductor quantum dots coupled weakly to two superconducting leads via tunnel barriers The conductance of this device is given by [9]: 476 477 e2k2 G=i-|ET, 4JT (1) ft where kF is the Fermi wave vector, h is the reduced Planck's constant, e is the electronic charge and T is the tunneling probability We deduce an expression for the tunneling probability, T, by solving the Bogoliubov-de Gennes (BdG) equation [10] (HA A H ), = EV, (2) where the Hamiltonian H of the system is given by: ft2 d2 2m dx ,, UCN2 n where V) is the potential barrier height at they'-th region of the quantum dot, Uc is the charging energy of the quantum dot, EF is the Fermi energy, A is the superconductor energy gap The magnetic energy is given byftmc =fteB —T , where B m is the magnetic field The solution of (2) is Vj (x) = Aj exp( ikjX) M + Bj exp(-kjX)l ) (4) This eigenfunction is inside the quantum dot in the y'-th region and the corresponding eigenfunction inside the superconducting leads is given by: \f/(x) = C exp(ik'x)[ " + D exp(-ik'x)j V ] (5) The wave vector inside y-th quantum dot is kj=(2m*(Veff ±E))05/ft, (6) where V*.=V„+-^-+«a»c+EF, (7) and the corresponding wave vector of quasiparticles inside each superconductor is k' = (2m*(EF - V0 ± VE -A ))" lh (8) The eigenfunction u, v of the corresponding quasiparticles (electrons/holes) due Andreev reflection process which occurs at the S-Sm interface are given by: -#P^ Ifi_F2_-A!)! E The coefficients Aj and 5, are determined by matching conditions at the S-Sm interface, that is B:)=MBI) where the coefficient Rj is expressed as follows: 478 ' ( k j + k j + 1)exp(i(-kj + k j + ) X j (k - k ^ e x p f t - k j - k j + ) x ^ R 2k.s [(krkj + )exp«k + k j + ) X j ) (10) (k + k j + 1)exp(i(kj - k j + ) X j It can be shown that the tunneling probability Tis expressed as [12]: T = (l + C?cO", where c = (V e f f 1_ (11) sinhkb)/ ' (12) AW^rV' eff C , =2cosh(kb).cos(k'a)z I '4,,, veff // W(E(V - E ) ) |Lexp(2kb) sin(k'a) (13) The parameters a and ft represent the diameter of the quantum dot and the width of the barrier Now, substituting (12,13) into (11) we get an expression for the tunneling probability T It is then substituted into (1) to get the conductance G for the junction considered in this paper G = ^ (2 i + c f c j y i (14) 47t fi Numerical calculations The Schottky barrier height at the S-Sm interface was determined as previously [13].The conductance was calculated at different magnetic fields, bias voltage and the energy of electrons Fig shows the normalized conductance-energy relation which exhibits a resonance behavior This might be due to quantum interference of quasiparticles under the effect of magneticfield.This result is in good agreement with those in the literature [11] 16 15- psc 14- !»] 12- 11 10- Figure Energy dependence of conductance X - \***\ • - G-Thmw \ -J^-"*\ ^\ **•» Figure Magnetic field dependence of the conductance Fig shows the conductance-magnetic field relation This relation exhibits a quantization in the conductance as predicted experimentally in [8] 479 I 1995 , I 1990 ! 1985f V 19?/I9f5 1JT70 j»65 #960 - ™* ^» ™ » dV/dl-Thoor j^JS-S r—1950 ' V ( mV ) Figured voltage dependence of differential resistance Fig shows the differential resistance-bias voltage relation which exhibits a peak at F = The present results are in good agreement with those [8] These results show the role of Andreev reflection between two NbN2DEG interface and accordingly subharmonic energy gap structure should appear at V=2A/(ne), ( " = 1,2, ) In case ofNbN, the energy gap A ~ meV, i.e., in our case n = which agrees with [8,14] Conclusion In the present paper, the conductance of the mesoscopic device was derived by solving the Bogoliubov-de Gennes equation It was found a quantization of conductance with resonance at certain values of energy Our results are in good agreement with those in the literature References BeenakkerC W J., Mesoscopic Quantum Physics (North-Holland, Amsterdam, 1995) van Wees B J., Takayanagi H., Mesoscopic Electron Transport (Kluwert, Dordrecht, 1997) Kastner M A., Rev Mod Phys 64 (1992) 849 Legand B., et al., Appl Phys Lett 73 (1998) 96 Phillips J., et al., Appl Phys Lett 72 (1998) 3509 Kutchinsky J., et al., Phys Rev Lett 78 (1997) 931 Kashiway S., et al., Jpn J Appl Phys 34 (1995) 4555 Takayanagi H., et al., Physica B 249-251 (1998) 462 Zaitsev A., Sov Phys JETP 59 (1984) 1115 10 de-Gennes P G., Superconductivity of Metals and Alloys (Benjamin, New York, 1966) 11 Khlus V A., et al., Physica C 214 (1993) 413 12 Claughton N R., et al., J Phys.: Condens Matter (1995) 8757 13 MinaA.N., Phillips A H., Shaheen M F., Said N A., Physica C 341-348 (2000)301 14 Zyuzin A Yu., Phys Rev B 50 (1994) 323 PHYSICS, CHEMISTRY AND APPLICATION OF NANOSTRUCTURES, 2001 MODELING O F THE DIFFERENTIAL CONDUCTANCE OF MESOSCOPIC SYSTEM: THEORY AND SIMULATION A.H.ALY Physics Department, Faculty of Sciences, Cairo University Beni-Suef, Egypt E-mail: arafal6@yahoo.com Quantum conductance properties of a mesoscopic device are studied The device is composed of a semiconductor between two superconducting electrodes The results show the importance of the differential conductance measurements in order to get information about the subgap structure Introduction Modern device fabrication techniques have made it possible to construct tunnel junction devices on the submicron level [1] Such mesoscopic devices are the step in evolution of small devices whose primary objectives are faster characteristic times and a low energy dissipation New effects rise in this mesoscopic domain as a result of the quantum mechanical phase of electrons as well as the discrete nature of the electronic charge The quantized conductance explained by the Landauer formula [2] has been observed in [3,4] The behavior of superconducting field-effect transistors is sensitive to the quality of the superconductor-semiconductor (S-Sm) contacts, and it is possible to change the carrier concentration in the semiconductor by the proximity effect In this paper a quantitative meory of the transport characteristics of the S-Sm-S sandwich type junction is developed The role of the Andreev-reflection at the S-Sm interface is taken into account Theoretical approach The junction under investigation, is S-Sm-S, where the semiconductor region is of mesoscopic size [5] A Sm-S junction is convenient in manufacturing microelectronics devices, since the Schottky barrier at the interface is much more transparent than a typical dielectric tunnel barrier [6] However, some semiconductors such as InAs not form a Schottky barrier at the S-Sm interface At this interface electrons experience two processes, namely, normal tunneling and Andreev reflection [7] We will compute the conductance G for both process The conductance, Gl5 due to the normal tunneling of electrons is given by [8]: 480 481 G 2eA E 'r" dE Si '=T / 2«.D] i + t +t (^-V exp[(- ^W " ' ymh ){2A The tunneling probability T depends on b, NB, E, and the distance between the two electrodes D The differential conductance G2 due to Andreev reflection [8,9] could be calculated as follows At the S-Sm interface the dissipative electrical current is converted into the dissipationless supercurrent The mechanism for this conversion was discovered by Andreev [12] An electron excitation slightly above the Fermi level in the semiconductor is reflected at the interface as a hole excitation slightly below the Fermi level The missing charge 2q is removed as a supercurrent The reflected hole has (approximately) the same momentum as the incident electron This curious scattering process is known as the Andreev reflection So, the conductance G2 will be computed using the relation: G2=(l/eRnV„)/A(E)f(E-qV0)dE, (6) where R„= (1+2Z2)R, and R„ = [2Ae2vFN(0)]-1 , in which Z, A, vF, and N(o) are respectively, the dimensionless scattering parameter modelling the elastic scattering at the S-Sm interface, the cross-sectional area of the interface, the Fermi velocity, 482 and the density of states at the Fermi energy The parameter A(E) represents the probability of the Andreev reflection at the S-Sm interface [7,11]: A(E) = [2(E2-A2)"2]/[E + (E2-A2)"2] (7) Now, substituting (7) into (6) and performing integration, we get an expression for the Andreev reflection contributed part of the differential conductance: ,r2E(qV„ + E,), (kBT)2 o»=eqV„R/ _, _E , E_ (8) A + qV„ where the limits E^ and En^ are the minimum and maximum energies of electrons in the Andreev reflection at the S-Sm interface The total differential conductance G of the junction under study is a sum of two contributions:fromthe normal tunneling process (5) andfromthe Andreev reflection process (8) Results and conclusion We have calculaetd the total differential conductance G, considering the tunneling process as a stochastic one The values of energies of the tunnelling electrons and these of the electrons which experience the Andreev reflection has been varied as a random variable and we calculated the values of E^,, and En^ by the Monte-Carlo technique Also, we calculated the barrier height, t^ to be 0.53 eV This value is in good agreement with [12] Figs 1,2 present results showing variation of the differential conductance G with V0 -6 -1 V„(mV) Figure Bias voltage dependence differential conductance at 4>b = of the -2 V0(niv) Figure Bias voltage dependence of the differential conductance at considered Fig shows the decrease of the differential conductance G with the temperature increase In conclusion, the quantum transport in the S-Sm-S mesoscopic system has been treated on the basis of the WKB approximation and taken into consideration the role of the Andreev reflection The final formula for the current has been deduced The numerical results obtained are found to be in fair agreement with the experimental data 483 Figure Temperature dependence of the differential conductance T(K) References AverinD V., LikharevK K In Nanostructures and Mesoscopic systems, ed by Kirk W P., Reed M A (Academic Press, Boston, 1992) Landauer R , Phil Mag 21 (1970) 863 Van Wees B J., Van Houten H., Beenakker C W J., Williamson J G., Kouwenhoven L P., Van der Marel D., Foxon C T., Phys Rev Lett 60 (1988) 848 Wharam D A., Thornton T J., Newbury R , Pepper M., Ahmed H., Frost J E F, Hasko D G., Peacpck D C , Ritchie D A., Jones G A., J Phys C21(1988)L209 Klapwijk T M., Physica B 197 (1994).481 Beenakker C W J In Transport Phenomena in Mesoscopic Systems, ed by Fukuyama H., Ando T (Springer, Berlin, 1992) Blonder G E., Tinkham L., Klapwijk T M., Phys Rev B 52 (1982) 451 Glazman L I., Lesovik G B., Khmel'ntskii D E., Shekhter R I., JETP Lett 48 (1988) 238 Aly H A., Ph D Thesis (1999) 10 Beenakker C W J In Mesoscopic Quantum Physics, ed by Akhemans E et al (North-Holland, Amsterdam, 1995) 11 Andreev A F., JETP 19 (1964) 1228 12 Becker Th., Muck M , Heidenet Ch., Physica B 204 (1995) 183 13 Kroemer H., Ngyen C , Hu E L., Yuh E L., Thomas M., Wong Ki C , Physica 203(1994)298 14 Kleinsasser A W., Jackson T N, McInturffD., Rammo F., Petti G D., Woodall J M.,Appl Phys Lett 57 (1990) 1812 AUTHOR INDEX Carmo M C , 147 Caruso F., 298 Caruso R A., 298 Cavaco A., 147 Cepek C , 94 Chang Y P., 379 Cichos F., 302 ColligonJ S.,480 Adamson P., 208 AhopeltoJ., 182,473 Aktsipetrov O A., 196 AkulovG.Y.,389 Aleshkin V Ya., 138 AlyA H.,487 Andreev B A., 466 Angnsani Armenio A., 250 Anishchik V M., 389 Amaud d'Avitaya F., 437, 461 Artemyev M V., 152,412 Astafiev O., 466 Attanasio C , 250 Danil'tsev V M., 138 DanilyukA L.,461,470 Dmitriev A V., 110, 122 DolgovaT V., 196 Dzero M O., 48 Balk L J., 212 Bassani F., 200,437 Bauer E., 228 Bayer M., 30 BechstedtF., 158, 162 Belich R F., 428 Belogorokhov A 1., 320 Belogorokhova L I., 320 Belousl A., 186 Berashevich J A., 470 Berbezier I., 57 Bibik A I., 48, 102 Bimberg D., 147 Biryukov A V., 138 Bogdanchikova N E., 284 Bogdanov E V., 130 Bogush V., 432 Bokshits Yu V., 290 Bondarenko A S., 311 Borisenko V E., 3,212 Born H., 147 Borzdov V M., 477 Buhmann H., 40 Butler T M., 76 Edamatsu K., 22 Edwards S.-P., 480 Efremov A A., 416 EfremovM D., 126,134 Emmerling M., 473 Erofeeva I V., 466 EvtukhA A.,416 Eychmuller A., 307 Fedin D V., 416 Fedorov I., 394 Fedorovich R D., 276 Fedoruk G G., 204 Fedutik Yu A., 290 Fedyanin A A., 196 Feshchenko D V., 428 Forchel A., 30, 473 Forr6 L., 86 Furthmuller J., 158, 162 Gaiduk P I., 375 485 486 Galaktionov E A., 126, 134 Galenchik V O., 477 GalkinK.N., 192 GalkinN.G., 192,246 Gaponenko N V., 216, 397 Gaponenko S V., 118,216 GaponikN P., 307 Gaponov S V., 138 Gavrilenko V I., 466 GavrilovS.A.,316, 320 Gerlach B., 48 Glybin V., 432 Goroshko D L., 246 Grundmann M., 147 Grushevski V V., 389 Guirleo G., 200 Gurin V S., 284 Gurinovich L I., 152 Gusyatnikov V N., 142 Hansen O P., 130 HeiderhoffR.,212 Heinrichsdorff F., 147 HeitzR., 147 Heuken M., 384, 455 Hiyamizu S., 22 Hoffinann A., 147 Homewood K P., 76,480 Ichikawa M., 356 Ilievsky A A., 130 Ilyushonok I P., 324 Ioannou-Sougleridis V., 437 Itoh T., 22 Jalochowski M., 228 Kachan S M., 238 KackellP., 162 KaganovichE B., 174, 178 Kamp ML, 473 Kassing R., 332 KawabeM., 15 Kawano Y., 466 KazakN.S.,421 KeiperR., 110 Khilo A N., 421 Khmelnitski A I., 389 KholodA.N.,461,472 KhrykinO I., 138 Kirkby K J., 76,480 Kislyakov E F., 204 Kivinen P., 182,473 Kiyayev O E., 276 KlyuiN I., 170 KolesnikE E.,407 Komarov F F., 477 Komiyama R S., 466 Kononenko V K., 142 KometaO B., 170 Korotkov A L., 466 Koshikawa T., 228 Kosikov S I., 192 Kraak W., 130 Krachino T V., 166 Kravtchenko D A., 320 Kretinin A V., 134 Krivoshchapov S Ts., 246 Krylova G V., 389 Kudrawiec R., 224 Kukharenko L V., 389 KukhtaA V.,407 Kushnir V N., 250 Kuz'min M V., 166 Lavrinenko A V., 118 Lazarouk S K., 446 Lee B C , 379 Lee C P., 379 Lee H M., 379 Lemeshko S V., 316 487 Leschenko V G., 389 Lifshits V G., 186 Liniger M., 203, 461 Litovchenko V G., 170, 416 LitvinYu M., 416 LoginovM V., 166 Lourenco M., 76 Luenenbuerger M., 384,455 Lundsgaard Hansen J., 375 Lutsenko E V., 384,455 Lynkov L., 432 MakaraV.A., 170 MakeyevV.V., 110 Maksimov S., 40 Manninen A., 182,473 ManoilovE G., 174, 178 Maria Grazia Betti, 258,264, 265 Maritato L., 250,367 Marko I P., 388,455 MarowskyG., 196 Martemyanov M G., 196 MaslovA M., 192 MatteiG., 196 Maydikovskii A I., 196 Mckinty C N., 76,480 Metelskiy T A., 428 Miglio L., 69 Mileshko L P., 224 Mina A N., 483 MininaN Ya., 130 MironovV.L., 138 Misevich A V., 324 Misiewicz J., 30,224 Mitianok V V., 106 MittsevM A., 166 MQhwald H., 294 Molchan I S., 224 Molenkamp L W., 40 Morozov Yu A., 142 MudryiA V., 216, 455 MurelA V., 138 Nassiopoulou A G., 437 Naumovets A G., 276 Nawrocki W., 242 Nefedov I S., 142 Nylandsted Larsen A., 375 Ouisse T., 437 Outkina E A., 403 Pachinin V I., 224 Pavlovskii V N., 388,455 Pekola J., 182,473 Petranovskii V P., 284 Petrov A Yu., 250 Piryatinskii Yu P., 170 PivinJ C , 216, 401 Pochtenny A E., 324 Poklonski N A., 106,204 Ponyavina A N., 238, 216 Popov V V., 114 Portavoce A., 57 Poznyak S K., 307 Preobrazhenskii V V., 126, 134 Prikhodko P., 394 Prischepa S L., 250 ProkhorovO A., 216 Protzmann H., 384, 455 PrunnilaM., 182,473 Pupysheva O V., 122 Radtchenko I L., 294 RagoishaG A., 311 Raiteri P., 69 Rassamakin Yu V., 416 Rogach A L., 307 Ronda A., 57 RoschinV M.,316 RozhinA G., 170 488 RyzhevichA A., 421 RyzhkovS V., 186 SachenkoA V., 174, 178 SachkovV A., 126, 134 Sagaidak D I., 204 Sancrotti M., 94 Sandomirski K S., 118 SarikovA V.,416 Savin A.M., 130 Savin A., 182,473 SchinellerB.,384,455 Sch8nenberger C , 86 Schuhmacher D., 196 Schuster J., 302 S