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Available online at www.sciencedirect.com Physica E 17 (2003) 183 – 184 www.elsevier.com/locate/physe Ecient indirect-exciton luminescence in silicon nanowires S. Nihonyanagi, Y. Kanemitsu ∗ Graduate School of Materials Science, Nara Institute of Science and Technology, Ikoma, Nara 630-0192, Japan Abstract We have studied the near-infrared photoluminescence (PL) spectrum and dynamics in crystalline silicon nanowires with a triangular cross-section of about 65 nm side length. Time-resolved PL measurements clearly show that the nanowire has a shorter PL lifetime than bulk crystalline silicon. The PL decay curve of the nanowire consists of the fast and slow components. The temperature dependence of the fast component intensity agrees with that of the integrated PL intensity. This agreement suggests that non-radiative recombination is suppressed in the nanowire. The short PL lifetime and no signiÿcant thermal quenching of the PL intensity result in the enhancement of the radiative recombination in the nanowire. ? 2002 Elsevier Science B.V. All rights reserved. PACS: 78.55.Ap; 71:35: − y; 78.66.Db; 78.67.Lt Keywords: Photoluminescence; Nanowire; Crystalline silicon; Indirect exciton 1. Introduction In order to realize optical interconnections in an integrated circuit (IC), it is necessary to fabricate an ecient light emitter compatible with standard, Si-based IC technologies. In the last decade, many researchers have reported ecient photolumines- cence (PL) and electroluminescence from Si-based nanostructures, such as porous Si and Si nanocrys- tals [1,2]. However, because of their inhomogeneous structures, the observed PL is broad. Recently, pro- gresses of silicon processing techniques have made it possible to fabricate high-quality nanometer-sized Si-based nanostructures. It opens opportunities not only to realize ecient light-emitting devices also to ∗ Corresponding author. Graduate School of Materials Science, Nara Institute of Science and Technology, 8916-5 Takayama, Ikoma, Nara 630-0101, Japan. Fax: +81-74372-6019. E-mail address: sunyu@ms.aist-nara.ac.jp (Y. Kanemitsu). study electronic and optical properties in crystalline Si (c-Si) nanostructures hidden behind structural in- homogeneity. In our previous paper [3], we have fab- ricated large c-Si nanowires and the near-infrared PL is observed even at room temperature. In this study, we performed time-resolved PL measurements and discuss the mechanism of ecient PL in the c-Si nanowires. 2. Sample and experimental setup The c-Si nanowires were fabricated from c-Si substrate by anisotropic etching and thermal oxida- tion techniques [3]. The nanowire has a triangular cross-section of about 65 nm side length and are fully surrounded by silicon dioxide. The same c-Si substrate was used as the bulk c-Si sample and its surface was oxidized under the same condition. Time-resolved PL was measured by using a photon-counting method 1386-9477/03/$ -see front matter ? 2002 Elsevier Science B.V. All rights reserved. doi:10.1016/S1386-9477(02)00753-1 184 S. Nihonyanagi, Y. Kanemitsu /Physica E 17 (2003) 183–184 under 400 and 150 fs laser pulse excitation. The PL signal was detected by an InP/InGaAsP photomulti- plier. The samples were mounted on the cold ÿnger of a temperature-variable closed cycle He gas cryostat. 3. Results and discussion The Si nanowire shows several phonon-assisted PL bands, which are quite similar to those in bulk c-Si at low temperatures [3]. The PL decay curves were measured at 1:099 eV, which corresponds to the peak energy of the TO-phonon-assisted PL band. The inset in Fig. 1 shows the PL decay curves at 40 K both in the nanowire and bulk c-Si. The PL decay curve in the nanowire consists of two exponential decay com- ponents. The PL lifetime of the fast component in the nanowire is about 0:4 s, which is shorter than that in bulk c-Si. The lifetime of the slow component is comparable with that in bulk c-Si. Fig. 1 shows the temperature dependence of the fast-decay PL inten- sity and the integrated PL intensity in the nanowire and bulk c-Si. In the nanowire, the temperature de- pendence of the fast-decay PL intensity is in good 050100 10 –2 10 –1 10 0 0 10 Temperature (K) PL Intensity (arb. units) NW Bulk PL Intensity (arb. units) Time (µs) 40 K fast–decay NW Integrated Intensity NW Bulk Fig. 1. Temperature dependence of the fast-decay intensity in the nanowire (NW) ( • ) and the integrated intensity both in the NW and bulk c-Si ( and ). The inset shows PL decay curves at 40 K. agreement with that of the integrated intensity, com- pared with that in bulk c-Si. This agreement suggests that in the nanowire the fast radiative recombination process is dominant. The temperature dependence of the integrated PL intensity in the nanowire is com- pletely dierent from that in bulk c-Si. Considering the weak temperature dependence of the PL intensity, the radiative recombination is enhanced in the nanowire. It is likely that in the nanowire the enhancement of the radiative combination is caused by the spatial conÿne- ments of excitons due to the strains near the Si=SiO 2 interface [4], rather than the quantum conÿnements of excitons in the nanowire, because no blueshift of the PL energy is observed in the nanowire. 4. Conclusion We have studied PL dynamics in the large c-Si nanowires fully surrounded by silicon dioxide. Time-resolved PL measurements show that in the nanowire the PL decay curve consists of the fast and slow components and the PL lifetime of the fast component is shorter than that in bulk c-Si. It is con- sidered that the radiative recombination of excitons is enhanced in the nanowire. The temperature depen- dence of the PL intensity shows that the PL eciency is determined by the fast-decay components. Acknowledgements The authors would like to thank Prof. Y. Hirai of Osaka Pref. Univ. for sample preparations and discus- sions. This work was supported in part by The Foun- dation of Nara Institute of Science and Technology, and a Grant-in-Aid for Scientiÿc Research from Japan Society for the Promotion of Science. References [1] Y. Kanemitsu, Phys. Rep. 263 (1995) 1. [2] L. Pavesi, L. Dal Negro, C. Mazzoleni, G. FranzÂo, F. Priolo, Nature 408 (2000) 440. [3] Y. Kanemitsu, H. Sato, S. Nihonyanagi, Y. Hirai, Phys. Stat. Sol. (A) 190 (2002) 755. [4] S. Nihonyanagi, Y. Kanemitsu, unpublished data. . 78.67.Lt Keywords: Photoluminescence; Nanowire; Crystalline silicon; Indirect exciton 1. Introduction In order to realize optical interconnections in an integrated. Available online at www.sciencedirect.com Physica E 17 (2003) 183 – 184 www.elsevier.com/locate/physe Ecient indirect-exciton luminescence in silicon nanowires S.