GI I THIU LUN N M Cỏc vt liu ỏp in vi kh nng chuyn i c nng thnh in nng v ngc li ó v ang c s dng rng rói cỏc linh kin cm bin, cỏc thit b truyn ng v cỏc thit b vi c in t khỏc nh u dũ siờu õm v mỏy gia tc [1] Trong s cỏc vt liu ỏp in ph bin hin nh AlN, ZnO v cỏc vt liu vi cu trỳc tinh th dng perovskite Ba(Sr,Ti)O3 hay (K,Na)NbO3, thỡ vt liu ỏp in Pb(ZrxTi1-x)O3 (0 < x < 1, PZT) c la chn nhiu nht cú cỏc tớnh cht st in v ỏp in ni tri hn so vi cỏc vt liu ỏp in khỏc [172] Ngoi ra, mt cỏc c trng quan trng ca vt liu PZT l nh hng ca t l thnh phn Zr/Ti lờn tớnh cht ca vt liu, gõy bi s chuyn pha cu trỳc mt thoi t giỏc i vi vt liu PZT dng thỡ giỏ tr cc i ca h s phõn cc in d, hng s in mụi v h s ỏp in t c v trớ biờn pha hỡnh thỏi cu trỳc (morphotropic boundary), v trớ m vt liu chuyn t pha t giỏc sang pha mt thoi [19] V trớ biờn pha hỡnh thỏi cu trỳc ca vt liu PZT cú thnh phn l Pb(Zr0.52Ti0.48)O3 (PZT52/48) hay l hn hp ca hai thnh phn PbZrO3 (pha mt thoi) v PbTiO3 (pha t giỏc) vi t l 52/48 [20] Vic tớch hp cỏc vt liu ỏp in PZT di dng mng lờn trờn b mt silic l mt yu t quan trng nhm th c y kh nng ng dng ca cỏc linh kin vi c in t [48, 140, 154, 209, 82] Mng ỏp in s gúp phn lm gim kớch thc, tng nhy cng nh lm gim giỏ thnh sn phm Trong cỏc linh kin vi c in t ny thỡ quan trng hng u l vic ch to thnh cụng mng ỏp in cú cỏc cu trỳc v tớnh cht c trng nh mong mun Cu trỳc v tớnh cht ca mng ỏp in ph thuc vo nhiu yu t khỏc nh phng phỏp ch to, lp tip xỳc, lp in cc hay s pha ion Hin cú nhiu phng phỏp c s dng vic ch to mng ỏp in theo c hai phng phỏp: phng phỏp vt lý v phng phỏp húa hc Cỏc phng phỏp vt lý bao gm phng phỏp ph n x [205, 30, 178], phng phỏp bc bay xung laser (PLD) [220, 210, 125, 53, 135] v phng phỏp lng ng chựm phõn t epitaxy (MBE) [238] Trong s cỏc phng phỏp húa hc cú phng phỏp lng ng pha hi hp cht kim loihu c (MOCVD) [32, 249], phng phỏp lng ng hi húa hc bng plasma (PECVD) [73, 72] v phng phỏp quay ph sol-gel [245, 75, 8, 78, 216] Trong cỏc phng phỏp ny thỡ phng phỏp quay ph sol-gel l phng phỏp yờu cu thit b n gin, r tin v cú th d dng thay i thnh phn mng cng nh phự hp vi iu kin cụng ngh hin Vit Nam Tuy nhiờn nhc im ca phng phỏp ny l mt kt thp v mng thng b nt gy quỏ trỡnh ch to Trong lun ỏn ny, mng st in ỏp in PZT ó c ch to trờn silic bng phng phỏp quay ph sol-gel Quy trỡnh cụng ngh ch to mng PZT ó c ti u húa, trờn c s k tha v phỏt trin cỏc kt qu ca cỏc nghiờn cu trc, nhm thu c cỏc mng cú cht lng vi n nh cao Mng sau ch to cú mt kt cao v khụng b nt gy Vic ci thin cỏc tớnh cht st in v ỏp in ca mng c nghiờn cu thụng qua vic ch to mng vi cu trỳc d lp (cỏc lp mng PZT cú thnh phn khỏc c quay ph xen k vo nhau) Nguyờn nhõn l nh hng ca lp tip xỳc st in st in (vi thnh phn khỏc nhau), ng sut kộo cu trỳc gim i v cựng vi s hỡnh thnh mt th in ỏp ni ti lp tip x c ó lm tng kh nng quay ca cỏc domain st in Mng PZT sau ú c s dng vic ch to cỏc linh kin cm bin lng trờn c s cỏc rung ỏp in Thanh rung ỏp in, vi kớch thc micro-m t c ch to bng phng phỏp quang khc, bao gm hai phn: phn dao ng (in cc/mng PZT/in cc) c gn kt lờn trờn rung silic (dy 10 micro-một, rng 100 micro-một v di 100-800 micro-m t) phỏt hin ti hn ca cỏc linh kin cm bin ó c kho sỏt thụng qua vic gn kt cht ch th sinh hc MHDA (16Mercaptohexadecanoic acid, HS-(CH2)15-COOH), l cht dựng phỏt hin phõn t gõy bnh ung th ngi phỏt hin ti hn ca rung, kho sỏt dung dch cha MHDA, l 20 ng/mL hay 70 pmol/mL N Nhim v ca lun ỏn gm nhim v chớnh nh sau: o n nh quy trỡnh ch to mng ỏp in PZT vi cht lng cao bng phng phỏp quay ph sol-gel o Tớch hp mng PZT vo rung silic nhm ch to cỏc linh kin cm bin vi kớch thc micro-một o nh hng ng dng ca linh kin cm bin vic phỏt hin cỏc hp cht cn phõn tớch l nh vc y - sinh hc Lun ỏn c nghiờn cu bng phng phỏp thc nghim, kt hp vi phõn tớch s liu da trờn cỏc kt qu thc nghim ó cụng b v cỏc mụ hỡnh lý thuyt Cỏc mu s dng lun ỏn c ch to bng phng phỏp quay ph sol-gel ti Phũng thớ nghim Vi cm bin v h thng, Vin o to Quc t v Khoa hc vt liu (ITIMS), Trng i hc Bỏch khoa H Ni í Cỏc kt qu nghiờn cu chớnh ca lun ỏn ó c cụng b 10 bi bỏo ti cỏc v hi ngh khoa hc nc v quc t (vi bi trờn quc t ISI) Cỏc kt qu c trỡnh by t chng n chng Vic ch to thnh cụng linh kin cm bin lng vi kớch thc micro-m t trờn c s mng ỏp in PZT s gi p cho vic trin khai nghiờn cu phỏt hin cỏc hp cht sinh hc, c bit l cỏc phõn t cht gõy bnh ung th ngi u Cỏc mi t nghiờn cu ny l: (1) Ch to mng PZT bng phng phỏp quay ph sol-gel (phng phỏp húa hc) cú cht lng tt v lp li cao, cho phộp thc hin cỏc nghiờn cu v tớnh cht v ch to linh kin; (2) Kho sỏt nh hng ca nhit , chiu dy, in cc, cu trỳc d lp, pha v thnh phn ca mng lờn cỏc tớnh cht st in v ỏp in, nhm mc ớch ci thin cht lng ca mng; (3) Thit k, ch to v kho sỏt cỏc tớnh cht ca cỏc linh kin cm bin lng trờn c s , tựy thuc vo cỏc yờu cu ng dng khỏc nhau; (4) nh hng nghiờn cu ng dng ca cỏc linh kin cm bin ỏp in l nh vc y sinh hc B Lun ỏn c trỡnh by chng, 121 trang bao gm 111 hỡnh v v th, bng s liu C th cu trỳc ca lun ỏn nh sau: M : Mc ớch v lý chn vt liu st in-ỏp in Pb(ZrxTi1-x)O3 dng mng v cu tr c linh kin cm bin lng dng rung vi kớch thc micro-một C : C s lý thuyt C : Cụng ngh ch to v cỏc phng phỏp nghiờn cu C : Nghiờn cu tớnh cht ca mng mng sol-gel PZT C : Nghiờn cu nh hng ca pha Fe3+ v Nb5+ n tớnh cht ca mng PZT C P 5: Nghiờn cu ng dng ch to linh kin piezoMEMS : Tng kt v túm tt cỏc kt qu quan trng ó t c quỏ trỡnh nghiờn cu Cui cựng l b v rỡ ó CHNG C S Lí THUYT MEMS l tờn vit tt ca cm t Micro Electro Mechanical Systems - cú ngh a l h thng vi c in t MEMS cú th l mt linh kin riờng l hoc mt h tớch hp cỏc thnh phn in v c Thut ng MEMS chớnh thc s dng t nm 1987, c a v tha nhn ch v mt l nh vc mi Trờn thc t lch s ca cụng ngh MEMS bt u t nm 1954 Charles Smith tỡm hiu ng ỏp in tr trờn vt liu bỏn dn to tin cho nhng nghiờn cu, phỏt trin cỏc linh kin MEMS sau ny K t cú nhng nghiờn cu nn múng u tiờn tớnh n cụng ngh MEMS ó cú hn 60 nm lch s, cụng ngh MEMS ó cú nhng phỏt trin mnh m, t phỏ v cú nhng nh hng sõu rng n th gii cụng ngh, c bit cỏc l nh vc cụng ngh cao, t ng húa, y sinh [102, 219] Cỏc sn phm ca cụng ngh MEMS c ch to v a vo ng dng t nhng thp k 70, 80 Ngy cỏc sn phm ca cụng ngh MEMS ó tr nờn ph bin, a dng v em li li nhun cao [158, 76, 117] Vi s phỏt trin nh v bóo mi l nh vc cụng ngh núi chung v cụng ngh MEMS núi riờng cỏc nh khoa hc ó y mnh nghiờn cu v ng dng vt liu ỏp in ú cú vt liu Pb(ZrxTi1-x)O3 (PZT) ch to linh kin MEMS [51, 105, 74, 162, 77] Mng mng st in ỏp in PZT l vt liu cú kh nng ng dng cao thc tin bi h s phõn cc st in d ln, hng s in mụi cao v h s ỏp in ln [1] L T h t t i g Kh nng tinh th cú phõn cc t phỏt liờn quan n tớnh i xng ca ch ng Cỏc kt qu nghiờn cu cho thy cỏc h tinh th cú th c mụ t bi 32 nhúm i xng im Trong s ú cú 11 nhúm cú tõm i xng v 21 khụng tõm i xng Trong nhng tinh th cú cu tr c tõm i xng, c tớnh phõn cc khụng tn ti vỡ bt c v c t phõn cc u cú th o ngc li bi ph p bin i i xng nht nh Trong 21 nhúm khụng cú tõm i xng, tt c ngoi tr nhúm im 432 cú tớnh cht ỏp in Trong s 21 nhúm i xng khụng cú tõm i xng, 10 nhúm cú cu tr c n trc phõn cc Cỏc h tinh th vi cu tr c nh vy s cú tớnh cht phõn cc t phỏt Phõn loi cỏc lp tinh th nhúm im c mụ t trờn hỡnh 1.1 Theo phng trỡnh Maxwell, phõn cc t phỏt liờn h vi mt in tớch b mt theo cụng thc sau: Ps = ú Ps l phõn cc t phỏt, l mt in tớch b mt (1.1) 32 nhúm i xng im 11 nhúm cú tõm i xng 21 nhúm khụng tõm i xng 20 nhúm ỏp in nhúm khụng ỏp in 10 St in H h Hi g Ph i i h h h i i St in l hin tng xy mt s cht in mụi cú phõn cc in t phỏt c khụng cú in trng ngoi Mụ men lng cc in vt liu st in tng tỏc mnh vi nhau, nờn to s khỏc bit so vi cỏc cht in mụi khỏc phõn cc in tn ti c khụng cú in trng ngoi, nhng trờn ton vt liu mụ men lng cc in tng cng cú giỏ tr bng 0, cỏc mụ men lng cc in nh hng hn lon nhit 0K cỏc mụ men lng cc in song song vi nhau, to nờn phõn cc t phỏt Ngi ta cú th hiu v vt liu st in tng t nh vt liu st t Nh vy s khụng cú s tn ti ca phõn cc tc thi nht, m kh nng nh hng bi in trng ngoi s quyt nh ti vt liu st in [11, 12] Hỡnh 1.2 th hin ng cong in tr c trng xut hin quỏ trỡnh o ngc phõn cc vt liu st in Hỡnh 1.2a vi tinh th n ụ men c xỏc nh theo hng phõn cc phõn cc st in d P r v phõn cc st in t phỏt Ps c xỏc nh Biờn in trng E > Ec cn thit o v c t phõn cc Trng hp mu a tinh th c th hin trờn hỡnh 1.2b ng A-B dựng phng phỏp ngoi suy, ng B-C hng v in trng E = cho phõn cc st in bóo hũa Ps ng cong in tr ct trc tung ti E = cho bit phõn cc st in d H h g M g i i h h ; i T i g h i h 202, 55] a Ti h h i g i ụ men; g Trong trng hp ca n tinh th lý tng S ph thuc ca phõn cc vo in trng P(E) cú th gii thớch bng úng gúp: mt l cỏc ion in mụi v phõn cc in t, hai l phõn cc tc thi m nú c nh hng li in trng E tỏc dng ngc hng vi phõn cc vt quỏ trng kh phõn cc Ec dn ti hin tng nh hng li ng cong c trng P(E) S tn ti ca ng cong in tr l vt liu st in cú cỏc ụ men, ú l nhng vựng cha cỏc tiu tinh th cú cựng phng phõn cc t phỏt Cỏc giỏ tr in trng kh phõn cc EC v phõn cc st in Pr hay phõn cc d Pr l nhng thụng s quan trng c trng cho vt liu st in Di tỏc dng ca in trng ngoi, phõn cc in ca vt liu st in s thay i c v ln v hng S ph thuc ca phõn cc in vo in trng ngoi c th hin bng ng cong in tr (hỡnh 1.2) phõn cc in ban u cha cú tỏc dng ca in trng ngoi bng Khi tỏc dng vo mt in trng ngoi vi cng tng dn, phõn cc in ca vt liu tng dn (on AB) lờn mt giỏ tr cc i, gi l phõn cc in bóo ho Ps (on BC), l c ny dự cng in trng tng thỡ phõn cc in cng khụng tng thờm na Nu gim dn cng in trng thỡ phõn cc in ca st in cng gim theo nhng khụng trựng vi ng cong ban u Khi cng in trng ngoi bng thỡ phõn cc khụng v giỏ tr m tn ti mt phõn cc nht nh gi l phõn cc st in Pr trit tiờu hon ton phõn cc st in ny hay phõn cc d, cn tng cng in trng theo hng ngc li n giỏ tr in trng gi l in trng kh phõn cc hay lc khỏng in Ec (im F) Tip tc tng cng in trng theo chiu ny (on FG), phõn cc in o chiu v cng tng dn cho n giỏ tr -Ps Gim dn cng in trng v tng theo hng ngc li, ta s thu c ng cong kh p kớn gi l ng cong in tr Tớnh cht phi tuyn phn ỏnh c ch phõn cc ụ men chim u th v úng vai trũ quan trng i vi cỏc vt liu st in vựng in trng cao quan h P-E l quan h tuyn tớnh Di tỏc dng ca in trng mnh, cỏc ụ men ó hon ton nh hng theo in trng ngoi, c ch phõn cc ụ men khụng cũn vai trũ na m nhng ch cho c ch phõn cc in mụi tuyn tớnh thụng thng phõn cc d Pr tn ti khụng cú in trng ngoi, phõn cc khụng bin mt m trỡ mt giỏ tr xỏc nh ph thuc vo phm cht ca vt liu Trng kh phõn cc Ec l gii hn m in trng ngoi lm o hng phõn cc ụ men S chuyn pha t khụng st in-st in (P-F) v st in-st in cú th din t nh s m o ụ n v Tt c cỏc cations v anions cú th dch chuyn tng ng ti v trớ cõn bng ụ n v lp phng Hỡnh 1.3 Cu trỳc ABO3 ễ ( ) h h h g ( ), h gi ( ), h h i h i ( ) 5] Khi lm ngui xung di nhit Tc, pha lp phng thun in cú th chuyn thnh pha t giỏc, pha trc thoi v pha mt thoi Trong pha t giỏc, ụ n v lp phng ca cu tr c perovskite b k o di theo trc c, tc l theo phng [001], v kt qu l a = b < c (hỡnh 1.3 b) Vi pha trc thoi, ụ n v gión di dc theo ng ch o mt (phng [110]) Nh trờn hỡnh 1.3 c, a = c > b v gúc (gúc gia trc a v trc c) l nh hn 90o Vi pha mt thoi (hỡnh 1.3d), ụ n v b bin dng dc theo phng [111] vi a = b = c v < 90o Trong mi pha, lng cc in sinh bi s chuyn v ca cation B dc theo phng bin dng Khi ú Ps (phõn cc t phỏt) s song song vi hng [001], [110] v [111] tng ng vi pha t giỏc, trc thoi v mt thoi [16] H h i S h g Perovskite : a) T < Tn h 202, 55] h i ; ) T < Tc hai ụ e Theo quan im húa hc v tinh th, chui chuyn pha ny cú th c xem nh nh hng ca s dch chuyn ca ion Ti4+ cú th chim khụng gian Pb-O hoc Ba-O cu tr c Perovskite nờn chui chuyn pha ny lm gim kớch thc ca ch trng Ti Nờn kớch thc bỏn kớnh ca ion ó x t nh hng n s hỡnh thnh pha st in Do ú c PbTiO3 v BaTiO3 u cú pha st in CaTiO3 v SrTiO3 khụng cú [180] Trờn hỡnh 1.4 l s cu tr c Perovskite, ú hỡnh trũn to ch n t mng oxy, hỡnh trũn nh ch cỏc in tớch dng, vi T < Tn cu tr c phn st in v T < Tc hai ụ men st in c phõn cc ngc Hu ht vt liu st in u tn ti nhit m ti ú xy s chuyn pha Nhit ú gi l nhit Curie Tc Xung quanh im nhit Curie, tớnh cht nhit ng hc (tớnh cht in mụi, n hi, quang, nhit) ca vt liu ỏp in xy d thng Khi nhit ln hn nhit Curie, hng s in mụi gim theo nhit theo nh lut Curie-Weiss: C C T T0 T T0 (1.1) ú C l hng s Curie, T0 (T0 TC) l nhit Curie-Weiss Hi g h i Tng t nh trng hp vt liu st t, phõn cc lng cc in cú th t nh hng song song hoc phn song song Hỡnh 1.5 hin th ng cong phn st in, st in ca hai mu phõn cc khỏc Cỏc in tớch dng v in tớch õm cú th di chuyn theo cỏc hng i xung v i lờn Cỏc lng cc liờn kt to mt trt t phn st in V mt chc nng, mt vt liu c gi l phn st in nu nú cú cu tr c ụ men ca pha st in (tc l nng lng t ca vt liu st in v phn st in phi tng t) Ngc li, cho bit cỏc nh hng ca cỏc chuyn vỏch ụ men ca pha st in Mt cu trỳc xỏc nh to thnh st in hoc phn st in ph thuc vo tng lc in trng v phõn cc lng cc [18] H h g g h i ext |> Ec i i h h h i Hỡnh 1.5 cng hin th s ph thuc phõn cc vo in trng pha phn st in u tiờn vi mt in trng nh ch cú giỏ tr phõn cc d nh Ch in trng kh phõn cc Ec xut hin phỏ v trt t phn st in, giỏ tr phõn cc ln c hỡnh thnh Xung quanh v trớ quan trng ny ng cong in tr c quan sỏt mt cỏch tng t nh ch ng xy cỏc vt liu st in xung quanh E = 0, mc dự trng hp ny ng cong in tr l pha phn st in to nờn buc mt pha chuyn tip t pha phn st in to thnh pha st in, mt vớ d v mt pha phn st in l PbZrO3 Hi gh i Do phõn cc t phỏt PS, ph thuc vo nhit , cho nờn vi bt k s thay i nhit T no cng dn n s bin i cỏc in tớch phõn cc, tc l thay i phõn cc t phỏt P: P = ppy.T (1.2) ú ppy c gi l h s ho in Thay i lng in tớch phõn cc Q = P.A cú th xỏc nh dũng in I, vi A l din tớch bn cc t lờn hai mt ca bn tinh th ho in (hỡnh 1.6) õy cng l nguyờn tc hot ng ca cỏc u thu tớn hiu hng ngoi dng mng hot ng nhit phũng trờn c s t hp mng mng PZT nh nhng phn t ho in Khi mt chựm bc x hng ngoi chiu lờn u thu tớn hiu s lm thay i nhit ca mng PZT dn ti thay i phõn cc t phỏt ca mng, tc l thay i mt in tớch phõn cc S thay i ny c th hin bng tớn hiu dũng in hoc in ỏp u ca mch ngoi i h h h Hỡnh 1.6 i g i Hi i I h i g i i h P , h i hi mt s tinh th in mụi tỏc dng ng sut c hc, tinh th khụng ch b bin dng m cũn b phõn cc v phõn cc P t l thun vi ng sut T t vo ú l hiu ng ỏp in thun: P = d.T Pi = dijkTjk , vi i, j, k = 1, 2, (1.3) ú Pi l thnh phn ca v ct phõn cc, Tjk l thnh phn ca tenx ng sut, dijk l module ỏp in (tenx bc ba) Cỏc tinh th cú tớnh cht nh th gi l tinh th ỏp in cỏc tinh th ỏp in cng tn ti hiu ng ỏp in ngc: t tinh th vo in trng thỡ tinh th b bin dng, bin dng S cng t l thun vi in trng E v cú cựng h s t l d nh hiu ng ỏp in thun: Sjk = dijkEi S = d.E (1.4) ú, Sjk l thnh phn tenx bin dng, Ei l thnh phn ca v ct cng in trng Vỡ Tij v Sij l cỏc tenx i xng vi hai ch s ij nờn cỏc hiu ng ỏp in cú th vit di dng ma trn nh sau: Pm = dmjSj (1.5) Sj = dmjEm (1.6) vi m = 1, 2, 3; j = 1, 2, 3, 4, 5, Nh vy module ỏp in t 27 thnh phn gim xung cũn 18 thnh phn Tu theo tớnh i xng ca tinh th m s thnh phn c lp ca module ỏp in gim i rt nhiu - Cỏc thnh phn lc tỏc dng song song vo tinh th ỏp in d33 (hỡnh 1.7a) cho s dch chuyn in mụi (phõn cc) nu ng sut c ỏp dng cựng mt hng hoc cho ng sut, nu in trng l tỏc dng cựng mt hng H h a) Th S h h gúc g hi g song song i h h g i h i h h i ; c) Th h h i gh h [185] i ; b) Th h h g i g i h h g vuụng i ; - Thnh phn lc tỏc dng vuụng gúc vo tinh th ỏp in d31 (hỡnh 1.7b) cho s dch chuyn in mụi (phõn cc) nu ng sut c ỏp dng theo hng vuụng gúc, i vi ng sut dón v in trng l tỏc dng theo hng vuụng gúc - Thnh phn lc tỏc dng xiờn gúc vo tinh th ỏp in d15 (hỡnh 1.7c) cho s dch chuyn in mụi (phõn cc), nu mt ng sut xiờn gúc c ỏp dng hoc i vi mt bin dng trt, nu in trng tỏc dng trc tip Lý t uyt uy st G zbur -Landau Lý thuyt nhit ng v chuyn pha ca vt liu st in trờn c s phõn tớch hm nng lng t ó c Landau a [236] Trong lý thuyt ú, thụng s trt t P, phõn 10 [88] I Kanno, S Hayashi, R Takayama, and T Hirao, (1996) Superlattices of PbZrO3 and PbTiO3 prepared by multi-ion-beam sputtering Appl Phys Lett., 68(3): 328-330 [89] I Stolichnov, (2004) in Nanoscale Phenomena in Ferroelectric Thin Films, edited Se g he hi H g, e h II Size effe i i fe ee i e i : e f ize, Springer, New York, 4047 [90] I Suzuki and K Okada, (1978) Phenomenological theory of antiferroelectric transition IV Ferroelectric J Phys Soc Jpn., 45(4): 1302 [91] Ionela Vrejoiu,a Yinlian Zhu, Gwenaởl Le Rhun, Markus Andreas Schubert, Dietrich Hesse, and Marin Alexe, (2007) Structure and properties of epitaxial ferroelectric PbZr0.4Ti0.6O3 /PbZr0.6Ti0.4O3 superlattices grown on SrTiO3 (001) by pulsed laser deposition, Max Planck Institute of Microstructure Physics, D-06120 Halle, Germany, Appl Phys Lett 90, 072909 [92] J Ajitsaria, S Y Choe, D Shen and D J Kim, (2007) Modeling and analysis of a bimorph piezoelectric cantilever beam for voltage generation, Smart Mater Struct 16, 447454 [93] J Chen, M.P.Harmer and D M.Smyth, (1994) Composition control of ferroelectric fatigue in perovskite ferroelectric ceramics and thin films, J.Appl.Phys 76 5394 [94] J F Scott, D Matthew, (2000) Oxygen-vacancy ordering as a fatigue mechanism in perovskite ferroelectrics, Applied Physics Letters 76, 38013803 [95] J F Shepard Jr., P J Moses, S Trolier-McKinstry, (1998) The wafer flexure technique for the determination of the transverse piezoelectric coefficient (d31) of PZT thin films, Sensors and Actuators A 71, 133-138 [96] J H Lee, K H Yoon, K S Hwang, J Park, S Ahn and T S Kim, (2004) Label free novel electrical detection using micromachined PZT monolithic thin film cantilever for the detection of C-reactive protein, Biosens Bioelectron 20 269-275 [97] J -H Li, L Chen, V Nagarajan, R Ramesh, and A L Roytburd, (2004) Finite element modeling of piezoresponse in nanostructured ferroele i , Appl Phys Lett 84, 2626 [98] J Junquera and Ph Ghosez, (2003) Critical thickness for ferroelectricity in e ie hi , Nature 422, 506 [99] J K Yang, W S Kim, and H H Park, (2001) Effect of grain size of Pb(Zr0.4Ti0.6)O3 sol-ge e i e hi he fe ee i e ie , Appl Surf Films 169, 544 [100] J L Jones,A Pramanick, J.C.Nino, S.M.Motahari,E ăUstă undag,M R Daymond, and E C Oliver, (2007) Time-resolved and orientationdependent electric-e induced strains in lead zirconate titanate ceramics, Appl Phys Lett 90, 172909 130 [101] J Lee, L Johnson, A Safari, R Ramesh, T Sands, H Gilchrist, and V G Keramidas, (1993) Effects of crystalline quality and electrode material on fatigue in Pb(Zr,Ti)O3 hi capacitors, Appl Phys Lett 63, 27 [102] J M Herbert, (1982) Ferroelectric Transducers and Sensors, Measurement, Instrumentation, and Sensors Handbook, Second Edition Gordon and Breach, New York [103] J Pộrez de la Cruz, E Joanni, P.M Vilarinho, A.L Kholkin, (2010) Thickness effect on the dielectric, ferroelectric, and piezoelectric properties of ferroelectric lead zirconate titanate thin films, J Appl Phys., 108, pp 114106 [104] J S Cross, K Shinozaki, T Yoshioka, J Tanaka, S.H Kim, H Morioka, K Saito, (2010) Characterization and ferroelectricity of Bi and Fe co-doped PZT films, Materials Science and Engineering B 173, 1820 [105] J S Horwitz, K S Grabowski, D B Chrisey, and R E Leuchtner, (1991) In situ deposition of epitaxial PbZrxTi(1-x)O3 thin Films by pulsed laser deposition Appl Phys Lett., (13): 1565 [106] J Schwarzkopf and R Fornari (2006) Epitaxial growth of ferroelectric oxide Films Prog Cryst Growth & Charact., 52: 159 [107] J W Jang, S J Chung, W J Cho, T S Hahn, and S S Choi, (1997) Thickness e e e e f e e e e i i i f i e TiO hi by radio-frequencymagnetron sputtering, J Appl Phys 81, 6322 [108] J Zhai, X Yao, Z Xu, and H Chen, (2005) Integrated Ferroelectrics, vol 75, pp 47 [109] Jeon Y B, Sood R, Jeong J H and Kim S G, (2005) MEMS power generator with transverse mode thin film, Sensors and Actuators A: Physical 122 (1), 16-22, 2005 [110] Jian Lu, Yi Zhang, Takeshi Kobayashi, Ryutaro Maeda, Takashi Mihara, (2007) Preparation and characterization of wafer scale lead ziconate titanate film for MEMS application, Sensor and Actuators A 139, 152-157 [111] John F Moulder, William F Stickle, Peter E Sobol, Kenneth D Bomben, (1979) Handbook of X Ray Photoelectron Spectroscopy Perkin Elmer Corporation Physical Electronic Devision, USA [112] K Abe and S Komatsu, (1995) Ferroelectric properties in epitaxially grown Ba x Sr TiO3 thin films J App Phys 77, 6461 [113] K Carl and K H Haerdtl, (1978) Electrical after-effects in Pb(Ti,Zr)O3 ceramic, Ferroelectrics 17, 473-486 131 [114] K Matsuura, Y Cho, and R Ramesh, (2003) Observation of domain walls in P Ti0 8O hi i g i g i e ie e i i , Appl Phys Lett 83, 2650 [115] K Ramam, V Miguel, (2006) Microstructure, dielectric and ferroelectric characterization of Ba doped PLZT ceramics, Eur Phys J Appl Phys 35 43-47 [116] K S Hwang, S M Lee, K Eom, J H Lee, Y S Lee, J H Park, D S Yoon and T S Kim, Nanomechanical microcantilever operated in vibration modes with use of RNA aptamer as receptor molecules for label-free detection of HCV helicase, Biosens Bioelectron 23 (2007) 459-465 [117] K S Hwang, S M Lee, S K Kim, J H Lee, T S Kim, (2009) Micro- and Nanocantilever Devices and Systems for Biomolecule Detection, Ann Rev Analyt Chem 2, 77-98 [118] K S Yun, E Yoon, (2006) Micropumps for MEMS/NEMS and Microfluidic systems, in MEMS/NEMS Handbook Techniques and Applications, Editor T.L Cornelius, Springer-Verlag, 121-153 [119] Kayasu, M Ozenbas, (2009) The effect of Nb doping on dielectric and ferroelectric e ie f P T hi e e i e ii , Journal of the European Ceramic Society 29, 1157 [120] KH Hellwege and A M Hellwege, ed., (1990) Complex Perovskite-type Oxides, Landolt-Bornstein: Oxides, Vol 16a, Springer-Verlag [121] Klissurska, R D., Brooks, K G., Reaney, I M., Pawlaczyk, C., Kosec, M and Setter, N., (1995) Effect of Nb doping on the microstructure of solgel-derived P T hi J Am Ceram Soc, 78, 1513 [122] Kurchania, R and Milne, S J., ( 008) ( ) hi e ffe f i i i i P T gel route J SolGel Sci Technol., 28 143 [123] L E Cross, (1980) Encyclopedia of Chemical Technology 10, ed Kirk Othmer, Wiley [124] L E Cross (1967) Antiferroelectric-ferroelectric switching in a simple "Kittel" anti-ferroelectric J Phys Soc Jpn., 23(1): 77 [125] L Feigl, J Zheng, B I Birajdar, B J Rodriguez, Y L Zhu, M Alexe and D Hesse, (2009) Impact of high interface density on ferroelectric and structural properties of PbZr0.2Ti0.8O3/PbZr0.4Ti0.6O3 epitaxial multilayers, J Phys D: Appl Phys 42, 085305 [126] L Lian, N.R Sottos, (2004) Stress effects in sol-gel derived ferroelectric thin films, J Appl Phys., 95, pp 629-634 132 [127] Lee H N, Senz S, Zakharov N D, Harnagea C, Pignolet A, Hesse D and Gosele U, (2000) Nanoscale Characterisation of Ferroelectric Materials: Scanning Probe microscopy approach, Appl Phys Lett 77 3260 [128] Li B S., Li G R., Yin Q R., Zhu Z G., Ding A L., Cao W W (2005) Pinning and depinning mechanism of defect dipoles in PMnNPZT ceramics, J Phys D: Appl Phys., 38, pp 11071111 [129] Li B S., Li G R., Zhao S C., Zhu Z G., Ding A L (2005) Reorientation of Defect Dipoles in Ferroelectric Ceramics, Chin Phys Lett, 22(5), pp 1236-1238 [130] Li B S., Zhu Z G., Li G R., Yin Q R., Ding A L (2004), Peculiar Hysteresis Loop of Pb(Mn1/3Nb2/3)O3- Pb(Zr,Ti)O3 Ceramics, Jpn J Appl Phys., 43(4A), pp 14581463 [131] Ling-Sheng Jang, and Kuo-Ching Kuo, (2007) Fabrication and Characterization of PZT Thick Films for Sensing and Actuation, Sensors, 7, pp 493-507 [132] M D Nguyen, C T Q Nguyen, L Q Nguyen, H T Vu, H N Vu and G Rijnders, (2015) Quality factor and mass sensitivity dependence on length, width and bending mode of piezoelectric thin film microcantilevers, submitted to Sensors and Actuators B [133] M D Nguyen, C.T.Q Nguyen, T.Q Trinh, T Nguyen, T.N Pham, G Rijnders and H.N Vu, (2013) Enhancement of ferroelectric and piezoelectric properties in P T hi wi h he e ee e Mater Chem Phys 138, 862 [134] M D Nguyen, M Dekkers, H N Vu, G Rijnders, (2013) Film-thickness and composition dependence of epitaxial thin-film PZT-based mass-sensors, Sensors and Actuators A 199, 98-105 [135] M D Nguyen, R J A Steenwelle, P M te Riele, J M Dekkers, D H A Blank and G Rijnders (2008), Growth and properties of functional oxide thin films for PiezoMEMS, in EUROSENSORS XXII Dresden-Germany, p 810-813 [136] M Es-Souni *, A Piorra, C.-H Solterbeck, M Abed, (2001) Processing, crystallization behaviour and dielectric properties of metallorganic deposited Nb doped PZT thin films on highly textured 111-Pt, B86 (2001) 237244 [137] M Dawber, J.F Scott, (2000) A model for fatigue in ferroelectric perovskite thin films, Applied Physics Letters 76, 10601062 [138] M De Keijser, J F M Cillessen, R B F Janssen, A E M De Veirman, and D M de Leeuw, (1996) Structural and electrical characterization of heteroepitaxial e zi e i e hi , J.Appl Phys 79, 393 [139] M Dekkers, H Boschker, M van Zalk, M Nguyen, H Nazeer, E Houwman, G Rijnders, (2013) The significance of the piezoelectric coefficient d31,eff determined from cantilever structures, J Micromech Microeng 23 025008 133 [140] M Dekkers, M D Nguyen, R Steenwelle, P M te Riele, D H A Blank and G Rijnders, (2009) Ferroelectric properties of epitaxial Pb(Zr,Ti)O3 thin films on silicon by control of crystal orientation, Appl Phys Lett 95, 012902 [141] M H Lente and J A Eiras, (2000) 90 domain reorientation and domain wall rearrangement in lead zirconate titanate ceramics characterized by transient current and hysteresis loop measurements, J.Appl Phys 89, 5093 [142] M Iwata and Y Ishibashi (2000) Theory of morphotropic phase boundary in solid e solution systems of perovskite- i e fe ee i : gi ee e ụ e congurations Jpn J Appl Phys., 39: 5156, [143] M J Haun, T J Harvin, M T Lanagan, Z Q Zhuang, S J Jang, and L E (1989) Cross Thermodynamic theory of PbZrO3 J Appl Phys., 65(8): 3173 [144] M J Madou, (2011) Fundamentals of Microfabrication and Nanotechnology, Volume II, Manufacturing Techniques for Microfabrication and Nanotechnology, Third Edition, CRC Press, Taylor & Francis Group [145] M K Durbin, J.C Hicks, S.-E Park, T.R Shrout, (2000) X-ray diffraction and he e gi ie f he e gi ee e i i ụ e i i ge crystal relaxor ferroelectrics, J Appl Phys., 87, pp.8159-8164 [146] M Stengel, N.A Spaldin, (2006) Origin of the dielectric dead layer in nanoscale capacitors, Nature, 443 (2006), pp 679-682 [147] M Tsukada, H Yamawaki, and M Kondo, (2003) Crystal structure and polarization phenomena of epitaxially grown Pb(Zr,Ti)O3 thin-film capacitors, Appl Phys Lett 83pp 4393-4395 [148] Mark Daniel Losego, (2005) The Chemical solution deposition of lead zirconate titanate (PZT) thin films directily on copper surfaces, Master of scienc [149] Michael A.Todd; PaulP Donohue; Rex Watton; Dennis J Williams; Carl J Anthony; Mark G Blamire, (2002) High-performance ferroelectric and magnetoresistive materials for next-generation thermal detector arrays, Proc SPIE 4795, Materials for Infrared Detectors II, 88 [150] Minh D Nguyen, Thong Q Trinh, M Dekkers, E.P Houwman, Hung N Vu and Guus Rijnders, (2014) Effect of dopants on ferroelectric and piezoelectric properties of lead zirconate titanate thin films on Si substrates, Ceramics International, 40 (2014) 1013-1018 [151] Minh Nguyen Duc, (2010) Ferroelectric and piezoelectric properties of epitaxial PZT films and devices on silicon, Ph.D thesis University of Twente, Enschede, The Netherlands, 2010, p.101 134 [152] N A Pertsev and A G Zembilgotov, (1996) fe ee i hi : The e i i ụ men populations in epitaxial i wi h e e i e , J Appl Phys 80, 6401 [153] N A Pertsev, , A G Zembilgotov R Wazer, (1998) Effective dielectric and piezoelectric constants of thin polycrystalline ferroelectric films, Volume 40, Issue 12, pp 2002-2008, Phys Rev [154] N Izyumskaya, Y I Alivov, S J Cho, H Morkoỗ, H Lee, Y S Kang, Processing, structure, properties, and applications of PZT thin films, Crit Rev Solid State Mater Sci 32 (2007) 111-202 [155] N Yazdi, F Ayazi, and K Najafi., (1998) Micromachined inertial sensors, Proceedings of the IEEE 86 1640-1659 [156] Nava Setter, (2007) Electroceramic-Based MEMS: Fabrication-Technology and Applications, Springer Science-Bussiness Media, Newyork, USA [157] Nguyen Thi Quynh Chi, Pham Ngoc Thao, Nguyen Tai, Trinh Quang Thong, Nguyen Duc Minh and Vu Ngoc Hung, (2012) Improved ferroelectric and piezoelectric properties in PZT thin films with heterolayered structure, International Conference on Advanced Materials and Nanotechnology (ICAMN), 13-14/12/2012, Hanoi, Vietnam, pp.128-131 [158] Nguyen Thi Quynh Chi, Pham Ngoc Thao, Nguyen Tai, Trinh Quang Thong, Vu Thu Hien, Nguyen Duc Minh, Vu Ngoc Hung, (2013) Fabricattion and improvement of electrical properties of heterolayered lead zirconate titanate (PZT) thin films, Tp KH v CN cỏc Trng i hc K thut, s 95C, pp 171-176 [159] Noheda B., Cox D E., Shirane G., Gonzalo J A., Cross L E., Park S E (1999) A Monoclinic Ferroelectric Phase in the Pb(Zr1- xTix)O3 Solid Solution, Appl Phys Lett., 74, pp 2059 [160] Noheda B., Gonzalo J A, Guo R., Park S E., Cross L E., Cox D E., Shirane G (2000) The Monoclinic Phase In PZT: New Light on Morphotropic Phase Boundaries, AIP Conf Proc., 535, pp 304-313 [161] Noheda B.,Cox D E., Shirane G., Guo R., Jones B., Cross L.E (2000) Stability of the monoclinic phase in the ferroelectric perovskite PbZr1- xTixO3, Phys Rev B, 63, p 014103 [162] O Auciello and A I Kingon,(1992) A critical view of physical vapor deposition techniques of the synthesis of ferroelectric thin Films IEEE 8-th International Symposium on Applications of Ferroelectrics, Proceedings, 1: 320 135 [163] O E Fesenko, R V Kolesova, and Yu G Sindeyev, (1978) The structural phase transition in lead zirconate in super-high electric Fields Ferroelectr., 20: 177, [164] O Lohse, D Bolten, M Grossmann, and R Waser, W Hartner, and G Schindler, (1998) Ferroelectric Random Access Memories: Fundamentals and Applications, Mater Res Soc Proc 267 Springer-Verlag, Berlin-Heidelberg-New York [165] Orlando Auciello, (1997) A critical comparative review of PZT and SBT - based science and technology for non-volatile ferroelectric memories, An International Journal, Volume 15, Issue 1-4, pages 211-220 [166] P Ari-Gur and L Benguigui, (1974) X-ray study of the PZT solid solutions near morphotropic phase transition Solid State Commun., 15: 1077 [167] P C Juan, J D Jiang, W C Shih, J Y M Lee, (2007) Effect of annealing temperature on electrical properties of metal-ferroelectric (PbZr0.53Ti0.47O3)insulator (ZrO2)- semiconductor (MFIS) thin-film capacitors, Microelectron Eng., 84, pp 2014- 2017 [168] P Gerber, U Bottger, and R Waser, (2006) ii i e e he e e i and elec e h i e ie f e zi e i e hi , J Appl Phys 100, 124105 [169] P K Clifford and D T Tuma, (1983) Characteristics of semiconductor gas sensors II Transient response to temperature change Sens Actuators B 3:255-281 [170] P K Larsen, G J M Dormans, D J Taylor, and P J v Veldhoven, (1994) Ferroelectric Properties and Fatigue of PbZr0.51Ti0.49O3 Thin Films of Varying Thickness: Blocking Layer Model, J Appl Phys., vol 76, pp 2405, 1994 [171] P Muralt, (2000) Ferroelectric thin films for micro-sensors and actuators: a review, J Micromech Microeng 10, pp 136146 [172] P Muralt, (2002) PZT thin films for microsensors and actuators: Where we stand?, Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on, Vol.47, Iss 4, pp 903 - 915 [173] Pham Ngoc Thao, (2013) optimization of fabrication parameters of Barium-doped Pb(Zr0.52Ti0.48)O3 thin films on TiN/Si substrates using pulsed laze deposition, mater thesis of science material science, ITIMS, University of science and Technology, HN [174] Pham Ngoc Thao, Nguyen Tai, Nguyen Thi Quynh Chi, Vu Thu Hien, Nguyen Duc Minh* and Vu Ngoc Hung, (2013) Effect of dopants on the properties of ferroelectric PZT thin-films capacitors, Journal of science & technology No 95 2013 Proceedings of IWNA 2013, the 4th International workshop on Nanotechnology and application 136 [175] Q Cui, C Liu, X F Zha, (2007) Study on a piezoelectric micropump for the controlled drug delivery system, Microfluid Nanofluid 3, 377-390 [176] R Bittner, K Humer, H W Weber, K Kundzins, A Sternberg, D A Lesnyh, D V Kulikov, and Y V Trushin (2004) Oxygen vacancy defects in antiferroelectric PbZrO3 thin films heterostructures after neutron irradiation J Appl Phys., 96(6): 3239 [177] R Bouregba and G Poullain, (2003) Computation of the polarization due to the ferroelectric layer in a stacked capacitor from SawyerTower hysteresis measurements,J Appl Phys., vol 93, pp 522 [178] R Bouregba, N Sama, C Soyer and D Remiens, Analysis of size effects in Pb(Zr0.54Ti0.46)O3 thin film capacitors with platinum and LaNiO3 conducting oxide electrodes, J Appl Phys 106 (2009) 044101 [179] R Dat, D J Lichtenwalner, O Auciello, and A I Kingon, (1994) The metalorganic CVD of lanthanunm nickelate electrodes for use in ferroelectric devices, Appl Phys Lett., vol 64, pp 2673 [180] R E Newnham, (1975) Structure-Property Relations, Springer-Verlag, New York [181] R Ramesh, A Inam, W K Cham, B Wilkens, K Myers, K Remschnig, D L Hart, and J M Tarascon, (1991) Epitaxial cuprate superconductor/ferroelectric heterostructures Science, 252: 944 [182] R Ramesh, H Gilchrist, T Sands, V G Keramidas, R Haakenaasen, and D.K Fork, (1993) FerroelectricLa-Sr-Co-O/Pb-Zr-Ti-O/La-Sr-Co-O heterostructures on silicon via template growth, Appl Phys Lett 63, 3592 [183] R Ramesh,W K Chan, B.Wilkens, H Gilchrist, T Sands, J.M Tarascon, D K Fork, J Lee, and A Safari, (1992) Fatigue and retention in ferroelectric Y-Ba-CuO/Pb-Zr-Ti-O/Y-Ba-Cu-O heterostructures, Appl Phys Lett 61, 1537 [184] R W Whatmore, (1999) Ferroelectrics, microsystems and nanotechnology Ferroelectric, 225: 179, 1999 [185] S B Majumder, B Roy, R.S Katiyar, S.B Krupanidhi, (2001) Effect of axepto and donor dopants on polarization components of lead zirconate titanate thin films, Applied Physics Letters 79 239242 [186] S B.Majumder, B.Roy, R.S.Katiyar, (2001) Effect of Nd doping on the dielectric and ferroelectric characteristics of sol-gel derived lead zirconate titanate (53/47) thin films, J.Appl.Phys 90, 2975 [187] S Buhlmann, B Dwir, J Baborovski, and P.Muralt, (2002) Size effect in mesoscopic epitaxial ferroelectric structures: Increase of piezoelectric response with decreasing feature size, Appl Phys Lett.80, 3195 137 [188] S D Bernstein, T Y Wang, Y Kisler, and R W Tustison, (1993) Fatigue of ferroelectric PbZrxTiyO3 capacitors with Ru and RuOX electrodes, J Mater Res 8, 12 [189] S D Berstein, Y Kisler, J M Wahl, S E Bernacki, and S R Collins, (1992) ffe f i hi e P T hi i e ie , Mater Res Soc Symp Proc 243, 373 [190] S Dohn, W Svendsen, A Boisen and O Hansen, (2007) Mass and position determination of attached particles on cantilever based mass sensors, Rev Sci Instrum 78, 103303 [191] S H Bae, K B Jeon, and B M Jin, (2005) A study of enhanced memory effect in PZ/PZT multilayers thin Films (in PZ/PZT series sequences) prepared by sol-gel technique Ferroelectr., 398: [192] S -H Kim, D.-J Kim, J Hong, S Streiffer, and A Kingon, (1999) Ghi ụ e and Fatigue Properties of Chemical Solution Derived Pb1-xLax(ZryTi1y)1x/4O3 Thin Films, J Mater Res 14 (1999), 1371 [193] S H Kim, J.G Hong, J C Gunter, S.K Streiffer, and A I Kingon, (1998) Ferroelectric Thin Films VI, Mater Res Soc Symp Proc 493, Warrendale, PA, 131 [194] S R Sangawar, B Praveenkumar, H.H Kumar, D.K Kharat, (2011) Effect of Fe and FeBa substitution on the piezoelectric and dielectric properties of lead zirconate titanate ceramics, Mater Science and Engineering B 176, 242 [195] S Sherrit, H D Wiederick, B K Mukherjee, M Sayer, (1997) An accurate equivalent circuit for the unloaded piezoelectric vibrator in the thickness mode, J Phys D: Appl Phys 30 2354-2363 [196] S Yokoyama, Y Honda, H Morioka, S Okamoto, H Funakubo, T Iijima, H Matsuda, K Saito, T Yamamoto, H Okino, O Sakata, and S Kimura, (2005) e e e e fee i e ie fe i i P ( ,Ti)O hi orientation and Zr/(Zr+Ti) ratio, J Appl Phys 98, 094106 [197] S Zurn, M Hsieh, G Smith, D Markus, M Zang, G Hughes, Y Nam, M Arik, D Polla, Fabrication and structural characterization of a resonant frequency PZT microcantilever, Smart Mater Struct 10 (2001) 252-263 [198] Sakaki C., Newalkar B., Komarneni S., Uchino K (2001), Grain Size Dependence of High Power Piezoelectric Characteristics in Nb Doped Lead Zirconate Titanate Oxyde Ceramics, Jpn J Appl Phys, 40, pp 6907-6920 [199] Sama N, Herdier R, Jenkins D, Soyer C, Remiens D, Detalle M and Bouregba R (2008) On the Influence of the Top and Bottom Electrodes A Comparative Study Between Pt and LNO Electrodes for PZT Thin Films, J Cryst Growth 310 3299 138 [200] Singh A K., Mishra S K., Pandey D., Yoon S., Baik S., Shin N (2008) Origin of High Piezoelectric Response of Pb(ZrxTi1-x)O3 at the Morphotropic Phase Boundary: Role of Elastic Instability, Applied Physics Letters, 92(2), ID:022910 (3 pages) [201] Susanne Hoffmann-Eifert, Dieter Richter, Susan Trolier-Mc Kinstry, (2012) Dielectric, Ferroelectric, and Optical Properties 12 [202] Susanne Hoffmann-Eifert, Peter Grỹnberg Institute & JARA-FIT, Forschungszentrum Jỹlich, Germany; Dieter Richter, Jỹlich Centre for Neutron Science & Institute for Complex Systems,Forschungszentrum Jỹlich, Germany; Susan Trolier-Mc Kinstry, MATSE Department, Pennsylvania State University, USA, (2012) Dielectric, Ferroelectric, and Optical Properties 12 NE3rd 12.book Seite 33 Dienstag, 14 [203] Suzuki H, Miwa Y, Naoe T, Miyazaki H, Ota T, Fuji M and Takahashi M, (2006) Orientation Control and Electrical Properties of PZT/LNO Capacitor Through Chemical Solution Deposition, J of the European Ceramic Society 26 1953-195 [204] T Haccart, D Remiens, E Cattan, (2003) Substitution of Nb doping on the structural, microstructural and electrical properties in PZT films, Thin Solid Films 423, 235242 [205] T Hata, S Kawagoe, W Zhang, K Sasaki and Y Yoshioka, (1998) Proposal of new mixture target for PZT thin films by reactive sputtering, Vacuum 51 665-671 [206] T J Yang, V Gopalan P J Swart, and U Mohideen, (1999) Direct Observation of Pi i g wi g f Si g e Fe ee i ụ e W , Appl Phys Lett 82 4106 [207] T Kobayashi, M Ichiki, R Kondou, K Nakamura, R Maeda, (2007) Degradation in the ferroelectric and piezoelectric properties of Pb(Zr,Ti)O3 thin films derived from a MEMS microfabrication process, J Micromech Microeng 17, 1238-1241 [208] T Kumazawa, Y Kumagai, H Miura, M Kitano, K Kushida, (1998) Effect of external stress on polarization in ferroelectric thin films, Appl Phys Lett., vol 72, No 5, pp 608-610 [209] T M Kamel, R Elfrink, M Renaud, D Hohlfeld, M Goedbloed, C de Nooijer, M Jambunathan and R van Schaijk, (2010) Modeling and characterization of MEMS-based piezoelectric harvesting devices, J Micromech Microeng 20 105023 [210] T Morita, Y Wagatsuma, Y Cho, H Morioka, H Funakubo and N Setter, (2004) Ferroelectric properties of an epitaxial lead zirconate titanate thin film deposited 139 by a hydrothermal method below the Curie temperature, Appl Phys Lett 84 5094-5096 [211] T Nakamura, Y.Nakao, A.Kamisawa, and H.Takasu, (1994) Preparation of P ( ,Ti)O hi ee e i i g I O2, Appl Phys Lett 65, 1522 [212] T Nakamura,Y.Nakao,A.Kamisawa, and H.Takasu, (1994) Preparation of Pb(Zr,Ti)O3 hi I I O2 electrodes, Jpn J Appl Phys 33, 5207 [213] T Oikawa, M Aratani, H Funukubo, K Saito, and M.Mizuhira, (2004) Composition and orientation dependence of electrical properties of epitaxial Pb(Zr1-xTix)O3 hi g w i g e g i he i e ii , J Appl Phys 95, 3111 [214] T P Burg, A R Mirza, N Milovic, C H Tsau, G A Popescu, J S Foster and S R Manalis, (2006) Vacuum-packaged suspended microchannel resonant mass sensor for biomolecular detection, J Microelectromech Syst 15, 1466-1476 [215] T P Burg, M Godin, S M Knudsen, W Shen, G Carlson, J S Foster, K Babcock and S R Manalis, (2007) Weighing of biomolecules, single cells and single nanoparticles in fluid, Nature 446, 1066-1069 [216] T Schneller and R Waser, (2007) Chemical modifications of Pb(Zr0.3,Ti0.7)O3 precursor solutions and their influence on the morphological and electrical properties of the resulting thin films, J Sol-Gel Sci Technol 42 337-352 [217] T Tuchiya, T Itoh, G Sasaki, T Suga, (1996) Preparation and Properties of Piezoelectric Lead Zirconate Titanate Thin Films for Microsensors and Microactuators by Sol-Gel Processing, J Ceram Soc Jpn 104, 159-163 [218] T Tybel, C H Ahn, and J.-M Triscone, (1999) Ferroelectricity in thin perovskite , Appl Phys Lett 75, 856 [219] T Yamamoto, (1998) Crystallographic, dielectric and piezoelectric properties of PbZrO3-PbTiO3 system by phenomenological thermodynamics Jpn J Appl Phys., 37: 6041 [220] T Yu, Y -F Chen, Z -G Liu, S -B Xiong, L Sun, X -Y Chen, L -J Shi and N B Ming, (1996) Epitaxial Pb(Zr0.53Ti0.47)O3/LaNiO3 heterostructures on single crystal substrates, Appl Phys Lett 69, 2092-2094 [221] Tagantsev A K, Landivar M, Colla E, Brooks K G and Setter N (1995) Depletion, depolarizing effects and switching in ferroelectric thin filmsScience and Technology of Electroceramic Thin Filmsed, O Auciello and R Waser (Boston, MA: Kluwer) p 301 140 [222] Tagantsev A K, Pawlaczyk C, (1994) Built-in electric field assisted nucleation and coercive fields in ferroelectric thin films Integr Ferroelectric, Brooks K and Setter N, Integrated Ferroelectrics: An International Journal, Volume 4, Issue [223] Tawidjaja, C.H Sim, J Wang, (2007) Ferroelectric and dielectric behavior of heterolayered PZT thin films, J Appl Phys., 102, pp 124102 [224] U Robels and G Arlt, (1993) ụ e w i g i fe ee i ie i of defects, J Appl Phys 73, 3454-3460 [225] V Nagarajan, C S Ganpule, B Nagaraj, S Aggarwal, S P.Alpay, A L Roytburd, E D.Williams, and R Ramesh, (1999) Effect of mechanical constraint on the dielectric and piezoelectric behavior of epitaxial Pb(Mg1/3Nb2/3)O3(90%)PbTiO3( 0%) e hi , Appl Phys Lett 75, 4183 [226] V Nagarajan, I G Jenkins, S P Alpay, H Li, S Aggarwal,L Salamanca-Riba, A L Roytburd, and R Ramesh, (1999) Thickness dependence of structural and electrical properties in epitaxial lead zirc e i e , J Appl Phys 86, 595 [227] V Yu Topolov, A V Turik, O E Fesenko, and V V Eremkin (1995) Mechanical stresses and three-phase states in perovskite-type ferroelectrics Ferroelectr.,Lett Sect., 20: 19 [228] Von R E Newnham, (1975) Crystal Chemistry of Non-Metallic Materials Auflage, Structure-property relations Band Springer-Verlag, Berlin- Heidelberg-New York., 234 Seiten, 92 Bilder, gebunden 72, DM [229] W A Brantley, (1973) Calculated elastic constants for stress problems associated with semiconductor devices, J Appl Phys 44 534-535 [230] W Cao and L E Cross, (1991) Theory of tetragonal twin structures in ferroelectric perovskite with a first-order phase transition, Phys Rev B44, [231] W H King, (1964) Piezoelectric sorption detector, Anal Chem 36 1735-1739 [232] W L Warren, B a Tuttle and D Dimos, (1995) Ferroelectric fatigue in perovskite oxides Appl Phys Lett 67 [10] 1426 [233] W L Warren, D Dimos, B.A Tuttle, R.D Nasby, G.E Pike, (1994) Electronic ụ men pinning in Pb(Zr,Ti)O3thin films and its role in fatigue, Applied Physics Letters 65 10181020 [234] Walter Heywang, Karl Lubitz, Wolfram Wersing, Editors, (2008) Piezoelectricity, evolution and Future of a Technology, Springer [235] Wang Y K, Tseng T Y and Lin P, (2002) Enhanced ferroelectric properties of Pb(Zr 0.53Ti 0.47)O3 thin films on SrRuO3 / Ru/SiO2 / Si substrates, Appl Phys Lett 80 3790 141 [236] Waser R., Bửttger U., Tiedke S (2005), Polar Oxides: Properties, Characterization and Imaging, Wiley-VCH Verlag, Weinheim, Germany [237] X Du, J.Zheng,U.Belegundu, and K.Uchino, (1998) Crystal orientation dependence of piezoelectric properties of lead zirconate titanate near themorphotropic phase boundary, Appl Phys Lett 72, 2421 [238] X Gu, (2007) High quality molecular beam epitaxy growth and characterization of lead titanate zirconate based complex-oxides, PhD thesis,Virginia Commonwealth University, Richmond, Virginia, USA [239] X J Meng, J.L Sun, J Yu, L.X Bo, C.P Jiang, Q Sun, S.L Guo, J.H Chu, (2001) Changes in the interface capacitance for fatigued lead-zirconate-titanate capacitors, Appl Phys Lett., 78, pp 2548-2550 [240] Xiao-hong Du, Jiehui Zheng, Uma Belegundu, and Kenji Uchino, (1998) Crystal orientation dependence of piezoelectric properties of lead zirconate titanate near the morphotropic phase boundary, Appl Phys Lett 72 [241] Xie J, Hu M, Ling S F and Du H, (2006) Monitoring structural integrity using a piezoelectric inertial actuator cum sensor, Sensors and Actuators A 126 182 [242] Xu Y (1991) Ferroelectric materials and their applications, Elsevier Science Publisher, North Holland, Tokyo-Paris-New York [243] Y B Jeon, R Sood, J h Jeong, S G Kim, (2005) MEMS power generator with transverse mode thin film PZT, Sensors and Actuators A 122 16-22 [244] Y -C Chen, Y.-M Sun, and J.-Y Gan, (2004) Improved fatigue properties of lead zi e i e e ge -implanted platinum electrodes, Thin Solid Films 460, 25 [245] Y -C Hsu, C.-C Wu, C -C Lee, G Z Cao and I Y Shen, (2004) Demonstration and characterization of PZT thin-film sensors and actuators for meso- and microstructures, Sens Act A: Phys 116 369-377 [246] Y Ishibashi and M Iwata (1999) Theory of morphotropic phase boundary in solidsolution systems of perovskite-type oxide ferroelectrics: Elastic properties Jpn J Appl Phys., 38: 1454, [247] Y L Li, S Y Hu, and L Q Chen, (2005) Fe 001 P Ti O e i i hi ee fatigue properties of perovskite Pb(Zr,Ti)O3 hi 142 ụ e h gie f , J Appl Phys 97, 034112 (1-7) [248] Y Masuda and T Nozaka, (2003) The i e e f 42, 5941 i i e ee e , Jpn J Appl Phys Part [249] Y Otani, S Okamura and T Shiosaki, (2004) Recent developments on MOCVD of ferroelectric thin films, J Electroceram 13, 15-22 [250] Z.+H Zhou, J.M Xue, W.Z Li, J Wang, H Zhu, J.M Miao, (2004) Heterolayered lead zirconate titanate thin films of giant polarization, J Appl Phys., 96 (2004), pp 5706-5711 [251] Zhu Chen, Chentao Yang, Bo Li, Mingxia Sun, Bangchao Yang, (2005) Preferred orientation controlling of PZT (52-48) thin films prepared by sol- gel process, Journal of Crystal Growth 258, 627-632 143 144 [...]... của ứng suất lệch n y trong màng dẫn đến sự thay đổi hệ thống trong tính chất áp điện Nhóm nghiên cứu của Nagarajan đã mô tả ảnh hưởng của việc tăng đáng kể bề d y của màng epitaxial cấu tr c dị lớp (001) Pb(Zr0.2Ti0.8)O3/SrRuO3 đến tính chất của màng Kết qủa nghiên cứu màng PZT có bề d y 15, 50 và 160 nm cho th y phân cực bão hòa có xu hướng giảm trong khi điện trường khử tăng lên khi bề d y màng. .. sử dụng Pt như là điện cực trên/ dưới, trong khi PZT có cấu tr c tụ điện cần sự dụng điện cực là các loại oxide dẫn điện thì mới thể hiện các đặc trưng như trên Cũng từ các nghiên cứu n y, các vật liệu điện cực được chứng tỏ là một y u tố quan trọng liên quan đến tính chất mỏi hơn chất lượng của tinh thể trong màng PZT [189, 101] Trong nghiên cứu của Lee [127], lắng đọng màng epitaxial PZT có định hướng. .. mất tính chất sắt điện khi bề d y của màng nhỏ hơn bề d y tối thiểu, khoảng 2,4 nm, trong cấu tr c màng BaTiO3 sử dụng điện cực trên và dưới đều là điện cực kim loại SrRuO3 Từ nghiên cứu n y cho th y tồn tại bề d y tối thiểu của màng mà trong đó tính chất sắt điện vẫn tồn tại Trường điện t nh khử phân cực g y ra bởi lưỡng cực tại phân biên sắt điện – kim loại đã được giả thuyết như lý do cho sự biến. .. mặt của màng và màng sắt điện n y cũng thể hiện các đặc tính mỏi áp điện khi so sánh với màng đa tinh thể được tạo ra với cùng điều kiện chế tạo Một số các nghiên cứu đã chỉ ra sự phụ thuộc của tính chất điện của màng epitaxial PZT vào định hướng tinh thể trong màng [237, 231, 196, 224, 151] Cụ thể, tính chất không chỉ phụ thuộc mạnh vào t lệ thành phần Zr/Ti, mà còn phụ thuộc nhiều vào định hướng tinh... sắt điện bất ổn định Tuy nhiên, từ các kết quả nghiên cứu tia X của PbTiO3 (chế tạo bởi phương pháp MOCVD trên đế SrTiO3) thay đổi theo nhiệt độ chế tạo và bề d y màng, nhóm nghiên cứu của Fong cho th y rằng pha sắt điện ở nhiệt độ phòng ổn định khi bề d y giảm xuống 12 nm Các kết quả n y ngụ ý rằng không có giới hạn độ d y được áp dụng đối với các linh kiện thực tế bởi hiệu ứng kích thước sắt điện. .. c), hướng n y gần với hướng [001] trong cấu tr c perovskite Nhóm nghiên cứu của Muralt [171] cũng công bố rằng màng PZT với hướng (100) có tính chất áp điện tốt hơn rất nhiều khi so sánh với màng PZT với định hướng (111) Đơn tinh thể hình thoi Pb(Zn1/3 Nb2/3)O3 – 8% PbTiO3 cũng cho kết quả tính chất áp điện bất đối xứng cao Mẫu được phân cực theo hướng [001] cho th y kết quả d33 cỡ 2500 pC/N, trong. .. màng epitaxial hay màng có định hướng cao Tuy nhiên, màng PZT sử dụng YBCO như điện cực trên/dưới cải thiện đáng kể tính chất mỏi đối với cả màng epitaxial và màng đa tinh thể 1.2.6 Ả ưở ấu trú dị ế tí ất à ỏ ZT Trong những năm gần đ y bên cạnh các giải pháp như sử dụng điện cực oxide [149, 165] hay sử dụng lớp đệm, màng đa lớp, màng đa lớp pha tạp [176, 173, 191], chúng tôi nhận th y màng cấu tr c dị... sắt điện qua màng PZT, nhưng thay vào đó là sự ngăn cản mầm và quá trình chuyển của các đô men đối diện tại phân biên màng oxide sắt điện - điện cực Một số nghiên cứu đã được phát triển để nghiên cứu các cơ chế liên quan đến tính chất mỏi [26, 244, 183, 248] Trong số các nghiên cứu n y, các kết quả thành công nhằm cải 33 thiện tính chất mỏi đã đạt được khi sử dụng lớp cấu tr c không chì SBT thay cho PZT, ... hướng tinh thể của màng PZT sau khi chế tạo [227] Hình 1.19 cho th y định hướng và t lệ thành phần chính là y u tố quyết định đến tính chất áp 25 điện và sắt điện của màng PZT bề d y 200 – 300 nm, nghiên cứu n y được công bố bởi nhóm nghiên cứu T Oikawa [213] H h i 9 ( ) Ph ôi  h ã h h h hầ Psat , ( ) Ph ị hh g Pr; ( ) i gP T 7] g hử c; ( )H Từ kết quả trên hình vẽ 1.19 cho th y giá trị của hệ số... Điều n y gợi ý rằng 29 điện t nh tại phân biên màng – điện cực đóng vai trò quan trọng trong việc quyết định đến đặc tính n y của màng Tính chất áp điện của điện dung kích thước dưới micromet với cấu tr c dị lớp Pb(Zr0.5Ti0.5)O3/SrTiO3/Si và Pb(Zr0.2Ti0.8)O3/SrTiO3 đã được tính toán để xác định ứng suất nội (ứng suất g y bởi sự hạn chế của chất lượng đế, sự biến dạng địa phương của đế, và sự biến dạng