PHOTODIODES - FROM FUNDAMENTALS TO APPLICATIONS Edited by Ilgu Yun Photodiodes - From Fundamentals to Applications http://dx.doi.org/10.5772/3406 Edited by Ilgu Yun Contributors Toshiaki Kagawa, Volodymyr Tetyorkin, Andriy Sukach, Andriy Tkachuk, Mikhail Nikitin, Viacheslav Kholodnov, Fernando de Souza Campos, José Alfredo Covolan Ulson, José Eduardo Cogo Castanho, Paulo Roberto De Aguiar, Yong-Gang Zhang, Yi Gu, Iftiquar Sk, Lung-Chien Chen, Ana Luz Muñoz, Joaquin Campos Acosta, Alejandro Ferrero Turrion, Alicia Pons Aglio, Aryan Afzalian, Sergey Dvoretsky, Vladimir Vasilyev, Vasily Varavin, Igor Marchishin, Nikolai Mikhailov, Alexander Predein, Irina Sabinina, Yuri Sidorov, Alexander Suslyakov, Aleksandr Aseev Published by InTech Janeza Trdine 9, 51000 Rijeka, Croatia Copyright © 2012 InTech All chapters are Open Access distributed under the Creative Commons Attribution 3.0 license, which allows users to download, copy and build upon published articles even for commercial purposes, as long as the author and publisher are properly credited, which ensures maximum dissemination and a wider impact of our publications. After this work has been published by InTech, authors have the right to republish it, in whole or part, in any publication of which they are the author, and to make other personal use of the work. Any republication, referencing or personal use of the work must explicitly identify the original source. Notice Statements and opinions expressed in the chapters are these of the individual contributors and not necessarily those of the editors or publisher. No responsibility is accepted for the accuracy of information contained in the published chapters. The publisher assumes no responsibility for any damage or injury to persons or property arising out of the use of any materials, instructions, methods or ideas contained in the book. Publishing Process Manager Romina Skomersic Technical Editor InTech DTP team Cover InTech Design team First published December, 2012 Printed in Croatia A free online edition of this book is available at www.intechopen.com Additional hard copies can be obtained from orders@intechopen.com Photodiodes - From Fundamentals to Applications, Edited by Ilgu Yun p. cm. ISBN 978-953-51-0895-5 free online editions of InTech Books and Journals can be found at www.intechopen.com Contents Preface VII Section 1 Fundamental Physics and Physical Design 1 Chapter 1 Two-Photon Absorption in Photodiodes 3 Toshiaki Kagawa Chapter 2 Physical Design Fundamentals of High-Performance Avalanche Heterophotodiodes with Separate Absorption and Multiplication Regions 27 Viacheslav Kholodnov and Mikhail Nikitin Section 2 Fabrication and Measurements 103 Chapter 3 Fabrication of Crystalline Silicon Solar Cell with Emitter Diffusion, SiNx Surface Passivation and Screen Printing of Electrode 105 S. M. Iftiquar, Youngwoo Lee, Minkyu Ju, Nagarajan Balaji, Suresh Kumar Dhungel and Junsin Yi Chapter 4 LWIR Photodiodes and Focal Plane Arrays Based on Novel HgCdTe/CdZnTe/GaAs Heterostructures Grown by MBE Technique 133 V. V. Vasiliev, V. S. Varavin, S. A. Dvoretsky, I. M. Marchishin, N. N. Mikhailov, A. V. Predein, I. V. Sabinina, Yu. G. Sidorov, A. O. Suslyakov and A. L. Aseev Chapter 5 Photodiodes as Optical Radiation Measurement Standards 173 Ana Luz Muñoz Zurita, Joaquín Campos Acosta, Alejandro Ferrero Turrión and Alicia Pons Aglio Section 3 Device Applications 193 Chapter 6 Si-Based ZnO Ultraviolet Photodiodes 195 Lung-Chien Chen Chapter 7 Infrared Photodiodes on II-VI and III-V Narrow-Gap Semiconductors 215 Volodymyr Tetyorkin, Andriy Sukach and Andriy Tkachuk Chapter 8 Al(Ga)InP-GaAs Photodiodes Tailored for Specific Wavelength Range 261 Yong-gang Zhang and Yi Gu Chapter 9 Single- and Multiple-Junction p-i-n Type Amorphous Silicon Solar Cells with p-a-Si1-xCx:H and nc-Si:H Films 289 S. M. Iftiquar, Jeong Chul Lee, Jieun Lee, Juyeon Jang, Yeun-Jung Lee and Junsin Yi Section 4 Circuit Applications 313 Chapter 10 Noise Performance of Time-Domain CMOS Image Sensors 315 Fernando de S. Campos, José Alfredo C. Ulson, José Eduardo C. Castanho and Paulo R. Aguiar Chapter 11 Design of Multi Gb/s Monolithically Integrated Photodiodes and Multi-Stage Transimpedance Amplifiers in Thin-Film SOI CMOS Technology 331 Aryan Afzalian and Denis Flandre ContentsVI Preface This book represents recent progress and development of the photodiodes including the fundamental reviews and the specific applications developed by the authors themselves. The key idea of this book is that it allows authors to deal with a wide range of backgrounds and recent research progresses in photodiode-related areas. Most of the material in this book was developed for the researchers in the field of optical or optoelectronic devices and circuits. A substantial proportion of the material is original and has been prepared by the authors of each book chapter specifically for this book. With re‐ spect to the original collection of the book chapters, this book contains several improve‐ ments and several new problems and related solutions are also discussed in the area of fun‐ damental physics and characteristics, and the device and the circuit applications. For editing this book, I have assumed that readers are well acquainted with the basic con‐ cepts of semiconductor physics fundamentals, especially with regard to: physical electron‐ ics; electronic materials; semiconductor processes; semiconductor device engineering; elec‐ tronic and optoelectronic circuits, etc. The book is intended for at least three kinds of readers: a) graduate students of intermediate and advanced courses in microelectronics or optoelectronics, who are presumed to be most‐ ly interested in photodiode-related applications; b) engineers in the area of optoelectronic devices, who are especially interested in optical sources and optical detectors; c) professio‐ nal researchers of many areas of applications (not restricted to microelectronics or optoelec‐ tronics or photonics). This book consists of 4 sections: Section 1 contains the fundamental concepts of photon absorption in photodiodes. In addi‐ tion, the physical design scheme of the high-performance avalanche heterophotodiodes is presented to guide the engineers how to design avalanche heterophotodiodes to optimize their performances in specific applications. Section 2 contains the fabrication of photodiode-based devices, such as solar cells, photodio‐ des, and focal plane arrays. Especially, the standards of optical radiation measurements us‐ ing photodiodes are also addressed. Section 3 describes various types of photodiodes as device applications. It includes the ultra- violet (UV) photodiodes, the infra-red (IR) photodiodes, compound semiconductor photodi‐ odes for specific wavelength, and wide bandgap solar cells. Section 4 presents the photodiode-related circuit applications. Here, the noise performance of CMOS image sensor is investigated in time-domain analysis and the high-speed Optoe‐ lectronic Integrated Circuit (OEIC) fabricated by monolithic integration of photodiode and amplifier is surveyed. In presenting this book, I would like to express my thanks to the authors who participate in writing for each book chapter and followed my construct comments, constructive criticism, and useful suggestions. They include: Toshiaki Kagawa, Viacheslav Kholodnov, Mikhail Ni‐ kitin, Sergey Dvoretsky, S. M. Iftiquar, V.V. Vasiliev, Ana Luz Muñoz Zurita, Lung-Chien Chen, Volodymyr Tetyorkin, Yong-Gang Zhang, Fernando de S. Campos, Iftiquar Sk, Aryan Afzalian, and others. I especially wish to express my sincere thanks to Ms. Romina Skomersic, Publishing Process Manager in InTech-Open Access Publisher, for the valuable publishing suggestions. More‐ over, I wish to thank the InTech-Open Access Publisher for helping in the typing adjustment and for revising the English text for each book chapter. Finally, I would like to thank for my wife, Hyun Jung Cha, and my two adorable sons, Jiho and Joonho Yun, for their sincere care and support during the whole summer of 2012. Ilgu Yun School of Electrical and Electronic Engineering, Yonsei University PrefaceVIII Section 1 Fundamental Physics and Physical Design [...]... work is properly cited 4 Photodiodes - From Fundamentals to Applications larization dependence of cross-TPA is consistent with the nonlinear susceptibility tensor elements obtained from the self-TPA analysis Cross-TPA can be applied to polarization measurements Photocurrents generated in the SiPD by cross-TPA between asignal light under test and a reference light are used to detect the polarization... Flip-Flop Memories IEEE J Quantum Electron., 30(1), 14 1-1 48 25 26 Photodiodes - From Fundamentals to Applications [16] Takahashi, Y., Neogi, A., & Kawaguchi, H (1998) Polarization-Dependent Nonlinear Gain in Semiconductor Lasers IEEE J Quantum Electron., 34(9), 166 0-1 672 Chapter 2 Physical Design Fundamentals of High-Performance Avalanche Heterophotodiodes with Separate Absorption and Multiplication... quarter-wave plate are repre‐ sented by the X- and Y-axes The phase of the polarization component along the Y-axis is delayed by ϕ relative to that along the X-axis The anisotropy of self-TPA for linearly polarized light was measured for Si- and GaAs-PDs The crystal axis [001] is made parallel to the x-axis The linear polarization is rotated by a half-wave plate (i.e., ϕ=π in Eq (13)) When the X-axis... (i.e., ϕ=π in Eq (13)) When the X-axis is tilted by an angle of θ relative to the x-axis, the polarization direction of the output light from the half-wave plate is tilted by 9 10 Photodiodes - From Fundamentals to Applications 2θ Thus, the polarization is parallel to the [001] and [011] directions when the rotation angle of the half-wave plate is θ = 0 and 22.5° , respectively Using Eq (7), the anisotropy... Two-Photon Absorption Coefficients in Zincblende Semiconductors IEEE J Quantum Electron., 30(2), 25 6-2 68 [8] Kagawa, T (2011) Polarization Dependence of Two-Photon Absorption in Si and GaAs Photodiodes at a Wavelength of 1.55 μm Jpn J Appl Phys., 50, 122203 [9] Hutchings, D C., & Wherett, B S (1994) Theory of anisotropy of two-photon ab‐ sorption in zinc-blende semiconductors Phys Rev B, 49(4), 241 8-2 426... easiest way to study the polarization dependence of self-TPA coefficient Because the fraction of the incident photons that are ab‐ Two-Photon Absorption in Photodiodes http://dx.doi.org/10.5772/50491 sorbed is quite small, the generated photocurrent is directly proportional to the absorption coefficientβ ppas shown by Eq (10) The photocurrents generated in Si- and GaAs-PDs were compared to discuss the...Chapter 1 Two-Photon Absorption in Photodiodes Toshiaki Kagawa Additional information is available at the end of the chapter http://dx.doi.org/10.5772/50491 1 Introduction Incident light with a photon energy ℏω induces two-photon absorption (TPA) when Eg / 2ℏωEg , where Eg is the band gap of the photo-absorption layer of a photodiode (PD) Be‐ cause the absorption coefficient is small, photocurrent generated... 28 Photodiodes - From Fundamentals to Applications APD) Suppression of tunnel current is caused by the fact that higher value of E corre‐ sponds to wider gap Eg Electric field in narrow-gap layer is not high enough to produce high tunnel current in this layer Dark current component due to thermal generation of charge carriers in SCR (thermal generation current with density J G ) is proportional to. .. two-photon absorp‐ tion spectra in semiconductors Phys Rev.B, 52(7), 498 6-4 995 [11] Yu, P T., & Cardona, M (2005) Fundamentals of Semiconductors, 3 rd ed.:Springer [12] Cardona, M., & Pollak, F H (1966) Energy-Band Structure of Germanium and Sili‐ con: The kp Method Phys Rev., 142(2), 53 0-5 43 [13] Kagawa, T., & Ooami, S (2007) Polarization dependence of two-photon absorption in Si avalanche photodiode... signal light was injected into a SOA witha polarization direction tilted at 45 ° against TE and TM modes Time dependent Jones vector components of the output pulse from the SOA are measured by the cross-TPA with a reference light pulse with a pulse width of 0.9 ps The results are shown in Figs 12(a) and (b) The closed circles and triangles 23 24 Photodiodes - From Fundamentals to Applications in Fig 12(a) . PHOTODIODES - FROM FUNDAMENTALS TO APPLICATIONS Edited by Ilgu Yun Photodiodes - From Fundamentals to Applications http://dx.doi.org/10.5772/3406 Edited. can be obtained from orders@intechopen.com Photodiodes - From Fundamentals to Applications, Edited by Ilgu Yun p. cm. ISBN 97 8-9 5 3-5 1-0 89 5-5 free online